Databook.fxp 1/13/99 2:09 PM Page B-65 B-65 01/99 U290, U291 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Low On Resistance Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: U290 Static Electrical Characteristics Min U291 Max Gate Source Breakdown Voltage V(BR)GSS – 30 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) –4 Drain Saturation Current (Pulsed) IDSS 500 Drain Cutoff Current ID(OFF) Drain Source ON Voltage VDS(ON) Static Drain Source ON Resistance rDS(ON) 1 3 Drain Source ON Resistance rds(on) 1 3 Drain Gate OFF Capacitance Cdgo Source Gate OFF Capacitance Source Gate Plus Drain Gate Min Process NJ1800D Max – 30 Unit Test Conditions V IG = – 1 µA, VDS = ØV –1 –1 nA VGS = – 15V, VDS = ØA –1 –1 µA VGS = – 15V, VDS = ØA – 4.5 V VDS = 15V, ID = 3 nA mA VDS = 10V, VGS = ØV – 10 – 1.5 – 30 V 100 mA 500 mW 4 mW/°C 200 TA = 150°C 1 1 nA VDS = 5V, VGS = – 10V 1 1 µA VDS = 5V, VGS = – 10V 30 70 mV VGS = ØV, ID = 10 mA 2 7 Ω VGS = ØV, ID = 10 mA 2 7 Ω VGS = ØV, ID = Ø f = 1 kHz 30 30 pF VDG = 15V, IS = ØV f = 1 MHz Csgo 30 30 pF VDG = 15V, IS = ØV f = 1 MHz Ciss 160 160 pF VDG = ØV, VGS = ØV f = 1 MHz Turn ON Delay Time td(on) 15 15 ns Rise Time tr 20 20 ns VDD = 1.5V, ID(ON) = 30 mA RL = 50Ω VGS(ON) = ØV Turn OFF Delay Time td(off) 15 15 ns (U290) VGS(OFF) = – 12 V Fall Time tf 20 20 ns (U291) VGS(OFF) = – 7V TA = 150°C Dynamic Electrical Characteristics Switching Characteristics TOÐ52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375