Databook.fxp 1/13/99 2:09 PM Page B-68 B-68 01/99 U311 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: U311 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS 20 Common Gate Forward Transconductance gfg 1000 Common Gate Output Conductance gog Gate Drain Capacitance Gate Source Capacitance Typ – 25 V 10 mA 300 mW 2.4 mW/°C Process NJ72L Max – 25 Unit Test Conditions V IG = – 1 µA, VDS = ØV – 150 pA VGS = – 15V, VDS = ØV – 150 nA VGS = – 15V, VDS = ØV –6 V VDS = 10V, ID = 1 nA 1 V VDS = ØV, IG = 1 mA 60 mA VDS = 10V, VGS = ØV µS VDS = 10V, ID = 10 mA f = 1 kHz 250 µS VDS = 10V, ID = 10 mA f = 1 kHz Cdg 2.5 pF VDS = 10V, ID = 10 mA f = 1 MHz Cgs 5 pF VDS = 10V, ID = 10 mA f = 1 MHz –1 TA = 150°C Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 17000 TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com