INTERFET U311

Databook.fxp 1/13/99 2:09 PM Page B-68
B-68
01/99
U311
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C.
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Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
U311
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Gate Source Forward Voltage
VGS(F)
Drain Saturation Current (Pulsed)
IDSS
20
Common Gate Forward Transconductance
gfg
1000
Common Gate Output Conductance
gog
Gate Drain Capacitance
Gate Source Capacitance
Typ
– 25 V
10 mA
300 mW
2.4 mW/°C
Process NJ72L
Max
– 25
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
– 150
pA
VGS = – 15V, VDS = ØV
– 150
nA
VGS = – 15V, VDS = ØV
–6
V
VDS = 10V, ID = 1 nA
1
V
VDS = ØV, IG = 1 mA
60
mA
VDS = 10V, VGS = ØV
µS
VDS = 10V, ID = 10 mA
f = 1 kHz
250
µS
VDS = 10V, ID = 10 mA
f = 1 kHz
Cdg
2.5
pF
VDS = 10V, ID = 10 mA
f = 1 MHz
Cgs
5
pF
VDS = 10V, ID = 10 mA
f = 1 MHz
–1
TA = 150°C
Dynamic Electrical Characteristics
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
17000
TOÐ72 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Drain, 3 Gate, 4 Case
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