Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: 2N6449 Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Max – 300 2N6450 Min Max Process NJ42 Unit – 200 IG = – 10 µA, VDS = ØV nA VGS = – 150V, VDS = ØV nA VGS = – 100V, VDS = ØV µA VGS = – 150V, VDS = ØV TA = 150°C – 100 µA VGS = – 100V, VDS = ØV TA = 150°C – 100 IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Test Conditions V – 100 Gate Reverse Current 2N6449 2N6450 – 300 V – 200 V – 300 V – 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/°C 6.4 mW/°C – 100 –2 – 15 –2 – 15 V VDS = 30V, ID = 4 nA IDSS 2 10 2 10 mA VDS = 30V, VGS = ØV Common Source Forward Transfer Admittance Yfs 0.5 3 0.5 3 mS VDS = 30V, VGS = ØV f = 1 kHz Common Source Output Conductance Yos 100 100 µS VDS = 30V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 20 20 pF VDS = 30V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 2.5 2.5 pF VDS = 30V, VGS = ØV f = 1 MHz Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TOÐ39 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com