Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C) 2N4117 2N4117A At 25°C free air temperature: Static Electrical Characteristics Min Max – 40 2N4118 2N4118A Min Max Gate Source Breakdown Voltage V(BR)GSS – 40 Gate Reverse Current 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A IGSS Gate Source Cutoff Voltage VGS(OFF) – 0.6 – 1.8 –1 –3 Drain Saturation Current (Pulsed) 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A IGSS 0.03 0.09 0.08 0.015 0.09 70 210 2N4119 2N4119A Min Max – 40 – 40 V 50 mA 300 mW 2 mW/°C Process NJ01 Unit Test Conditions V IG = – 1µA, VDS = ØV – 10 – 10 – 10 pA VGS = – 20V, VDS = ØV –1 –1 –1 pA VGS = – 20V, VDS = ØV –2 –6 V VDS = 10V, ID = 1 nA 0.24 0.2 0.6 mA VDS = 10V, VGS = ØV 0.08 0.24 0.2 0.6 mA VDS = 10V, VGS = ØV 80 250 100 330 µS VDS = 10V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 3 5 10 µS VDS = 10V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 3 3 3 pF VDS = 10V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.5 1.5 1.5 pF VDS = 10V, VGS = ØV f = 1 MHz TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-11 B-11 01/99 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators At 25°C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C) 2N4338 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS – 50 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Drain Source ON Resistance rds(on) Common Source Forward Transconductance gfs Common Source Output Conductance gos 5 Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Noise Figure 2N4339 Min Max – 50 – 50 V 50 mA 300 mW 2mW/°C Process NJ16 Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 – 100 pA VGS = – 30V, VDS = ØV – 100 – 100 nA VGS = – 30V, VDS = ØV – 0.6 – 1.8 V VDS = 15V, ID = 0.1 µA 1.5 mA VDS = 15V, VGS = ØV 0.05 (– 5) 0.05 (– 5) nA V VDS = 15V, VGS = ( ) 2500 1700 Ω VGS = ØV, ID = Ø A f = 1 kHz 600 1800 800 2400 µS VDS = 15V, VGS = ØV f = 1 kHz 15 µS VDS = 15V, VGS = ØV f = 1 kHz 7 7 pF VDS = 15V, VGS = ØV f = 1 MHz Crss 3 3 pF VDS = 15V, VGS = ØV f = 1 MHz NF 1 1 dB VDS = 15V, VGS = ØV RG = 1 MΩ, BW = 200 Hz f = 1 kHz – 0.3 –1 0.2 0.6 0.5 TA = 150°C Dynamic Electrical Characteristics TOÐ18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-12 B-12 01/99 2N4340, 2N4341 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Small Signal Amplifiers ¥ Current Regulators ¥ Voltage-Controlled Resistors At 25°C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C) 2N4340 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS – 50 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) –1 –3 Drain Saturation Current (Pulsed) IDSS 1.2 3.6 Drain Cutoff Current ID(OFF) 0.05 (– 5) Drain Source ON Resistance rds(on) 1500 Common Source Forward Transconductance gfs Common Source Output Conductance gos 30 Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Noise Figure 2N4341 Min Max – 50 V 50 mA 300 mW 2mW/°C Process NJ16 Unit – 50 Test Conditions V IG = – 1 µA, VDS = ØV – 100 – 100 pA VGS = – 30V, VDS = ØV – 100 – 100 nA VGS = – 30V, VDS = ØV –2 –6 V VDS = 15V, ID = 0.1 µA 3 9 mA VDS = 15V, VGS = ØV 0.07 nA (– 10) V VDS = 15V, VGS = ( ) TA = 150°C Dynamic Electrical Characteristics 800 Ω VGS = ØV, ID = Ø A f = 1 kHz 1300 3000 2000 4000 µS VDS = 15V, VGS = ØV f = 1 kHz 60 µS VDS = 15V, VGS = ØV f = 1 kHz 7 7 pF VDS = 15V, VGS = ØV f = 1 MHz Crss 3 3 pF VDS = 15V, VGS = ØV f = 1 MHz NF 1 1 dB VDS = 15V, VGS = ØV RG = 1 MΩ, BW = 200 Hz f = 1 kHz TOÐ18 Package Surface Mount Dimensions in Inches (mm) SMP4340, SMP4341 Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 12:00 PM Page B-17 B-17 01/99 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range 2N4867 2N4867A At 25°C free air temperature: Static Electrical Characteristics Min Max – 40 2N4868 2N4868A Min Max – 40 2N4869 2N4869A Min Max – 40 – 40 V 50 mA 300mW 1.7 mW/°C – 65°C to + 200°C Process NJ16 Unit V Test Conditions Gate Source Breakdown Voltage V(BR)GSS IG = – 1µA, VDS = ØV Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) – 0.7 –2 –1 –3 – 1.8 –5 V VDS = 20V, ID = 1 µA Drain Saturation Current (Pulsed) IDSS 0.4 1.2 1 3 2.5 7.5 mA VDS = 20V, VGS = ØV Common Source Forward Transconductance gfs 700 2000 1000 3000 1300 4000 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Output Conductance gos 1.5 4 10 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 25 25 25 pF VDS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 5 5 pF VDS = 20V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N Noise Figure NF – 0.25 – 0.25 – 0.25 nA VGS = – 30V, VDS = ØV – 0.25 – 0.25 – 0.25 µA VGS = – 30V, VDS = ØV TA = 150°C Dynamic Electrical Characteristics 20 20 20 nV/√HZ VDS = 10V, VGS = ØV f = 10 Hz 10 10 10 nV/√HZ VDS = 10V, VGS = ØV f = 1 kHz VDS = 10V, VGS = ØV f = 1 kHz 1 1 1 dB TOÐ72 Package Surface Mount Dimensions in Inches (mm) SMP4867, SMP4867A, SMP4868, SMP4868A, SMP4869, SMP4869A Pin Configuration (2N4867, 68, 69) RG = 20 kΩ (2N4867A, 68A, 69A) RG = 5 kΩ 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-25 B-25 01/99 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers At 25°C free air temperature: 2N6451 Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS Max – 20 2N6452 Min Max – 25 – 0.1 Gate Reverse Current – 0.5 IGSS – 0.2 –1 Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS – 0.5 – 3.5 – 0.5 – 3.5 2N6451 2N6452 – 20 V – 25 V – 20 V – 25 V 10 mA 10 mA 360 mW 360 mW 2.88 mW/°C 2.88 mW/°C Process NJ132L Unit Test Conditions V IG = – 1 µA, VDS = ØV nA VGS = – 10V, VDS = ØV nA VGS = – 15V, VDS = ØV µA VGS = – 10V, VDS = ØV TA = 125°C µA VGS = – 15V, VDS = ØV TA = 125°C V VDS = 10V, ID = 0.5 nA 5 20 5 20 mA VDS = 10V, VGS = ØV 15 30 15 30 mS VDS = 10V, ID = 5 mA f = 1 kHz mS VDS = 10V, ID = 15 mA f = 1 kHz µS VDS = 10V, ID = 5 mA f = 1 kHz µS VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transmittance | Yfs | Common Source Output Conductance | Yos | Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage e¯ N Noise Figure NF 50 25 5 25 5 5 10 nV/√Hz VDS = 10V, ID = 5 mA f = 10 kHz 3 8 nV/√Hz VDS = 10V, ID = 5 mA f = 1 kHz 1.5 2.5 dB VDS = 10V, ID = 5 mA RG = 10 kΩ f = 10 Hz TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 50 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers At 25°C free air temperature: 2N6453 Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS Max – 20 2N6454 Min Max Process NJ132L Unit – 25 IG = – 1 µA, VDS = ØV nA VGS = – 10V, VDS = ØV nA VGS = – 15V, VDS = ØV µA VGS = – 10V, VDS = ØV TA = 125°C –1 µA VGS = – 15V, VDS = ØV TA = 125°C – 0.75 – 5 – 0.75 – 5 V VDS = 10V, ID = 0.5 nA mA VDS = 10V, VGS = ØV mS VDS = 10V, ID = 5 mA f = 1 kHz mS VDS = 10V, ID = 15 mA f = 1 kHz µS VDS = 10V, ID = 5 mA f = 1 kHz µS VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz – 0.5 IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Test Conditions V – 0.1 Gate Reverse Current 2N6453 2N6454 – 20 V – 25 V – 20 V – 25 V 10 mA 10 mA 360 mW 360 mW 2.88 mW/°C 2.88 mW/°C – 0.2 15 50 15 50 Dynamic Electrical Characteristics Common Source Forward Transmittance | Yfs | Common Source Output Conductance | Yos | Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage e¯ N Noise Figure NF 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 20 40 100 25 20 40 100 25 5 5 5 10 nV/√Hz VDS = 10V, ID = 5 mA f = 10 kHz 3 8 nV/√Hz VDS = 10V, ID = 5 mA f = 1 kHz 1.5 2.5 dB VDS = 10V, ID = 5 mA RG = 10 kΩ f = 10 Hz TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-54 B-54 01/99 J201, J202 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J201 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J202 Max – 40 Min Typ Process NJ16 Max Unit V IG = – 1µA, VDS = ØV – 100 pA VGS = – 20V, VDS = ØV – 40 – 100 – 10 – 40 V 50 mA 360 mW 3.27 mW/°C – 10 Test Conditions pA VDG = 20V, ID = IDSS(min) – 0.3 – 1.5 – 0.8 –4 V VDS = 20V, ID = 10 nA IDSS 0.2 1 0.9 4.5 mA VDSS = 15V, VGS = ØV Common Source Forward Transconductance g fs 500 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Output Conductance g os 1 3.5 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 20V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 5 5 nV/√Hz VDS = 10V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics 1000 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ201, SMPJ202 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-55 B-55 01/99 J203, J204 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J203 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J204 Max – 40 Min Typ Process NJ16 Max Unit V IG = – 1µA, VDS = ØV – 100 pA VGS = – 20V, VDS = ØV – 25 – 100 – 10 – 40 V 50 mA 360 mW 3.27 mW/°C – 10 Test Conditions pA VDG = 20V, ID = IDSS(min) –2 V VDS = 20V, ID = 10 nA 3 mA VDS = 15V, VGS = ØV 1500 µS VDS = 20V, VGS = Ø V f = 1 kHz 10 2.5 µS VDS = 20V, VGS = ØV f = 1 kHz Ciss 4 4 pF VDS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 20V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 5 10 nV/√Hz VDS = 10V, VGS = ØV f = 1 kHz –2 – 10 – 0.3 IDSS 4 20 0.2 1.2 Common Source Forward Transconductance g fs 1500 500 Common Source Output Conductance g os Common Source Input Capacitance Dynamic Electrical Characteristics TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ203, SMPJ204 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-56 B-56 01/99 J210, J211 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J210 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J211 Max – 25 Min Typ Process NJ26L Max Unit V IG = – 1µA, VDS = ØV – 100 pA VGS = – 15V, VDS = ØV – 25 – 100 – 10 – 25 V 10 mA 360 mW 3.27 mW/°C – 10 Test Conditions pA VDS = 20V, ID = 1 mA –1 –3 – 2.5 – 4.5 V VDS = 15V, ID = 1 nA IDSS 2 15 7 20 mA VDS = 15V, VGS = ØV Common Source Forward Transconductance g fs 4000 12000 µS VDS = 15V, VGS = Ø V f = 1 kHz Common Source Output Conductance g os 200 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 10 10 nV/√Hz VDS = 15V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics 12000 6000 150 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ210, SMPJ211 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-57 B-57 01/99 J212 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier ¥ General Purpose Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J212 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) –4 Drain Saturation Current (Pulsed) IDSS Typ – 25 V 10 mA 360 mW 3.27 mW/°C Process NJ26L Max – 25 Unit Test Conditions V IG = – 1 µA, VDS = ØV pA VGS = – 15V, VDS = ØV pA VDS = 20V, ID = 1 mA –6 V VDS = 15V, ID = 1 nA 15 40 mA VDS = 15V, VGS = Ø V 7000 12000 µS VDS = 15V, VGS = Ø V f = 1 kHz 200 µS VDS = 15V, VGS = Ø V f = 1 kHz – 100 – 10 Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos Common Source Input Capacitance Ciss 4 pF VDS = 15V, VGS = Ø V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 pF VDS = 15V, VGS = Ø V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 10 nV/√Hz VDS = 15V, VGS = Ø V f = 1 kHz TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ212 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-58 B-58 01/99 J230, J231 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J230 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J231 Max – 40 Min Typ Process NJ16 Max Unit V IG = – 1µA, VDS = ØV – 250 pA VGS = – 30V, VDS = ØV – 40 – 250 –2 – 40 V 50 mA 360 mW 3.27 mW/°C –2 Test Conditions pA VDS = 20V, ID = ØV – 0.5 –3 – 1.5 –5 V VDS = 20V, ID = 1 µA IDSS 0.7 3 2 6 mA VDS = 20V, VGS = ØV Common Source Forward Transconductance g fs 1000 3500 1500 4000 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Output Conductance g os 1.5 3 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 20V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N nV/√Hz VDS = 10V, VGS = ØV f = 10 Hz nV/√Hz VDS = 10V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics 8 2 30 8 30 2 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ230, SMPJ231 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-59 B-59 01/99 J232 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J232 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Typ – 40 V 50 mA 360 mW 3.27 mW/°C Process NJ16 Max – 40 – 250 –2 Unit Test Conditions V IG = – 1 µA, VDS = ØV pA VGS = – 30V, VDS = ØV pA VDS = 20V, ID = ØV –3 –6 V VDS = 20V, ID = 1 µA 5 10 mA VDS = 20V, VGS = Ø V 2500 5000 µS VDS = 20V, VGS = Ø V f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 5 µS VDS = 20V, VGS = Ø V f = 1 kHz Common Source Input Capacitance Ciss 4 pF VDS = 20V, VGS = Ø V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 pF VDS = 20V, VGS = Ø V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N nV/√Hz VDS = 10V, VGS = Ø V f = 10 Hz nV/√Hz VDS = 10V, VGS = Ø V f = 1 kHz TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ232 20 6 30 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-21 B-21 01/99 2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N5460 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Voltage VGS Drain Saturation Current (Pulsed) IDSS Max 40 2N5461 Min Max 40 5 6 0.8 4.5 –1 –5 1 4 2N5462 Min 1 1 7.5 0.8 4.5 –2 –9 1.8 Process PJ32 Max Unit V IG = 10µA, VDS = ØV 5 nA VGS = 20V, VDS = ØV 1 µA VGS = 20V, VDS = ØV 9 V VDS = – 15V, ID = – 1 µA V VDS = – 15V, ID = – 100 µA V VDS = – 15V, ID = – 200 µA VDS = – 15V, ID = – 400 µA 40 5 1 0.75 40 V – 10 mA 310 mW 2.8 mW/°C 1.5 6 V –4 – 16 mA Test Conditions TA = 100°C VDS = – 15V, VGS = ØV Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transadmittance | Yfs | 2 Common Source Output Admittance | Yos | 75 Common Source Input Capacitance Ciss 7 Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage Noise Figure 0.8 0.4 kΩ VGS = ØV, ID = Ø A f = 1 kHz 6 mS VDS = – 15V, VGS = Ø V f = 1 kHz 75 75 µS VDS = – 15V, VGS = Ø V f = 1 kHz 7 7 pF VDS = – 15V, VGS = ØV f = 1 MHz 2 2 2 pF VDS = – 15V, VGS = ØV f = 1 MHz e¯ N 2.5 2.5 2.5 dB VDS = – 15V, VGS = ØV f = 100 Hz, BW = 1 Hz NF 115 115 115 nV/√Hz VDS = – 15V, VGS = ØV, RG = 1MΩ f = 100 Hz 1.5 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMP5460, SMP5461, SMP5462 5 2 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page G-4 G-4 01/99 TO-71 Package Dimensions in Inches (mm) 0.210 (5.34) 0.170 (4.32) 0.100 (2.54) - Dia. Typ. 6 Leads - Dia. 0.019 (0.483) 0.016 (0.406) 0.230 (5.84) 0.195 (4.96) 0.209 (5.31) 0.175 (4.44) Dia. Dia. 5 3 2 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 6 7 0.048 (1.22) 0.028 (0.71) 45° 0.046 (1.17) 0.036 (0.91) 1 Bottom View TO-72 Package Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 4 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 0.100 (2.54) - Dia. Typ. 3 2 4 0.048 (1.22) 0.028 (0.71) 45° 0.046 (1.17) 0.036 (0.91) 1 Bottom View www.interfet.com Databook.fxp 1/13/99 2:09 PM Page G-2 G-2 01/99 TO-18 Package Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.100 (2.54) - Dia. Typ. 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 3 2 0.048 (1.22) 0.028 (0.71) 1 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 45° 0.046 (1.17) 0.036 (0.91) Bottom View TO-39 Package Dimensions in Inches (mm) Alternate (Preferred) version cap height = Max 0.185 (4.70), Min 0.165 (4.19) 0.260 (6.60) 0.240 (6.10) 0.370 (9.40) 0.335 (8.51) 0.350 (8.89) 0.315 (8.00) Dia. Dia. 0.125 (3.18) Max. 0.009 (0.23) Min. 0.750 (19.05) Max. 0.500 (12.70) Min 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 3 0.210 (5.34) Dia. 0.190 (4.82) Dia. 2 0.050 (1.14) 0.029 (0.74) 1 45° 0.034 (0.86) 0.028 (0.71) Bottom View www.interfet.com Databook.fxp 1/13/99 2:09 PM Page G-6 G-6 01/99 TO-226AA Package (TO-92) Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) 3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min. Bottom View 0.022 (0.55) 0.014 (0.36) Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min. 0.105 (2.66) 0.095 (2.42) TO-226AB Package (TO-92/18) Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 3 Leads 0.022 (0.55) 0.014 (0.36) 3 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min. 0.052 (1.33) 0.047 (1.21) 2 1 Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min. 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) 0.022 (0.55) 0.014 (0.36) 0.105 (2.66) 0.095 (2.42) Bottom View www.interfet.com Databook.fxp 1/13/99 2:09 PM Page G-7 G-7 01/99 TO-236AB Package (SOT-23) Dimensions in Inches (mm) 0.021 (0.54) 0.015 (0.38) 3 0.010 (0.25) 0.005 (0.13) 0.0059 (0.15) 0.0035 (0.089) 8° 0.098 (2.64) 0.055 (1.40) 0.083 (2.10) 0.047 (1.20) 1 0.022 (0.55) 0.017 (0.44) 0.120 (3.05) 0.105 (2.67) 2 0.079 (2.00) 0.071 (1.80) 0.040 (1.02) 0.031 (0.79) 0.004 (0.10) 0.001 (0.02) 0.041 (1.12) 0.035 (0.89) SOIC-8 Package Dimensions in Inches (mm) 8 7 6 5 0.158 (4.01) 0.244 (6.20) 0.150 (3.81) 0.228 (5.79) 1 2 3 4 0.050 (1.27) 0.022 (0.56) 0.018 (0.046 0.018 (0.46 0.014 (0.36) 0.059 (1.50) 0.049 (1.24) 0.197 (5.00) 0.188 (4.78) www.interfet.com 0.015 (0.37) Min. 0.069 (1.75) 0.053 (1.35) 45° 0.009 (0.23) 0.007 (0.18) 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375