J203, J204 - InterFET Corporation

Databook.fxp 1/13/99 2:09 PM Page B-55
B-55
01/99
J203, J204
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
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Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
J203
At 25°C free air temperature:
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Operating Current
IG
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
Typ
J204
Max
– 40
Min
Typ
Process NJ16
Max
Unit
V
IG = – 1µA, VDS = ØV
– 100
pA
VGS = – 20V, VDS = ØV
– 25
– 100
– 10
– 40 V
50 mA
360 mW
3.27 mW/°C
– 10
Test Conditions
pA
VDG = 20V, ID = IDSS(min)
–2
V
VDS = 20V, ID = 10 nA
3
mA
VDS = 15V, VGS = ØV
1500
µS
VDS = 20V, VGS = Ø V
f = 1 kHz
10
2.5
µS
VDS = 20V, VGS = ØV
f = 1 kHz
Ciss
4
4
pF
VDS = 20V, VGS = ØV
f = 1 MHz
Common Source Reverse
Transfer Capacitance
Crss
1
1
pF
VDS = 20V, VGS = ØV
f = 1 MHz
Equivalent Short Circuit Input
Noise Voltage
e¯ N
5
10
nV/√Hz
VDS = 10V, VGS = ØV
f = 1 kHz
–2
– 10
– 0.3
IDSS
4
20
0.2
1.2
Common Source Forward
Transconductance
g fs
1500
500
Common Source Output Conductance
g os
Common Source Input Capacitance
Dynamic Electrical Characteristics
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ203, SMPJ204
Pin Configuration
1 Drain, 2 Source, 3 Gate
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