Databook.fxp 1/13/99 2:09 PM Page B-21 B-21 01/99 2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N5460 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Voltage VGS Drain Saturation Current (Pulsed) IDSS Max 40 2N5461 Min Max 40 5 6 0.8 4.5 –1 –5 1 4 2N5462 Min 1 1 7.5 0.8 4.5 –2 –9 1.8 Process PJ32 Max Unit V IG = 10µA, VDS = ØV 5 nA VGS = 20V, VDS = ØV 1 µA VGS = 20V, VDS = ØV 9 V VDS = – 15V, ID = – 1 µA V VDS = – 15V, ID = – 100 µA V VDS = – 15V, ID = – 200 µA VDS = – 15V, ID = – 400 µA 40 5 1 0.75 40 V – 10 mA 310 mW 2.8 mW/°C 1.5 6 V –4 – 16 mA Test Conditions TA = 100°C VDS = – 15V, VGS = ØV Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transadmittance | Yfs | 2 Common Source Output Admittance | Yos | 75 Common Source Input Capacitance Ciss 7 Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage Noise Figure 0.8 0.4 kΩ VGS = ØV, ID = Ø A f = 1 kHz 6 mS VDS = – 15V, VGS = Ø V f = 1 kHz 75 75 µS VDS = – 15V, VGS = Ø V f = 1 kHz 7 7 pF VDS = – 15V, VGS = ØV f = 1 MHz 2 2 2 pF VDS = – 15V, VGS = ØV f = 1 MHz e¯ N 2.5 2.5 2.5 dB VDS = – 15V, VGS = ØV f = 100 Hz, BW = 1 Hz NF 115 115 115 nV/√Hz VDS = – 15V, VGS = ØV, RG = 1MΩ f = 100 Hz 1.5 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMP5460, SMP5461, SMP5462 5 2 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375