Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: 2N3821 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS – 50 – 0.5 Gate Source Voltage Max VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Min Max – 50 Process NJ32 Unit Test Conditions V IG = – 1 µA, VDS = ØV – 0.1 – 0.1 nA VGS = – 30V, VDS = ØV – 0.1 – 0.1 µA VGS = – 30V, VDS = ØV V VDS = 15V, ID = 50 µA V VDS = 15V, ID = 200 µA V VDS = 15V, ID = 400 µA –6 V VDS = 15V, ID = 0.5 nA 10 mA VDS = 15V, VGS = ØV nA VDS = 15V, VGS = – 8V µA VDS = 15V, VGS = – 8V TA = 150°C Ω VGS = ØV, ID = Ø V f = 1 kHz –2 VGS Gate Source Cutoff Voltage 2N3822 – 50 V 10 mA 300 mW 2mW/°C –1 –4 0.5 2.5 2 –4 TA = 150°C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transconductance gfs 1500 4500 3000 6500 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Forward Transmittance | Yfs | 1500 µS VDS = 15V, VGS = ØV f = 100 MHz Common Source Output Conductance gos 10 20 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 6 6 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 2 2 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 200 VDS = 15V, VGS = ØV f = 10 Hz Noise Figure NF 5 VDS = 15V, VGS = ØV RG = 1 MΩ f = 10 Hz 3000 TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 200 nV/√Hz 5 dB 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375