ETC IFN147

Databook.fxp 1/13/99 2:09 PM Page D-6
D-6
01/99
IFN147
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK147
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
IFN147
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
Typ
– 40 V
10 mA
300 mW
2.4 mW/°C
Process NJ450
Max
– 40
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
–1
nA
VGS = – 30V, VDS = ØV
–1
µA
VGS = – 30V, VDS = ØV
– 0.3
– 1.2
V
VDS = 10V, ID = 1 µA
IDSS
5
30
mA
VDS = 10V, VGS = ØV
Common Source
Forward Transconductance
gfs
30
mS
VDS = 10V, VGS = ØV
IDSS = 5 mA
f = 1 kHz
Common Source Input Capacitance
Ciss
75
pF
VDS = 10V, VGS = ØV
f = 1 kHz
Common Source Reverse
Transfer Capacitance
Crss
15
pF
VDS = 10V, ID = Ø
f = 1 Hz
Noise Figure
NF
dB
VDS = 10V, ID = 5 mA
RG = 100Ω
f = 1 kHz
TA = 150°C
Dynamic Electrical Characteristics
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
40
1
10
dB
f = 100 Hz
TOÐ18 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Gate & Case, 3 Drain
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