Databook.fxp 1/13/99 2:09 PM Page B-22 B-22 01/99 2N5484, 2N5485, 2N5486 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF/UHF Amplifiers Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation Power Derating 2N5484 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max – 25 2N5485 Min Max – 25 –1 2N5486 Min – 0.2 – 0.2 Process NJ26 Max Unit V IG = 1µA, VDS = ØV –1 nA VGS = – 20V, VDS = ØV – 25 –1 – 25 V – 25 V 360 mW 3.27 mW/°C Test Conditions – 0.2 µA VGS = – 20V, VDS = ØV – 0.3 –3 – 0.5 –4 –2 –6 V VDS = 15V, ID = 10 nA TA = 100°C 1 5 4 10 8 20 mA VDS = 15V, VGS = ØV µS VDS = 15V, VGS = ØV µS VDS = 15V, VGS = ØV f = 400 MHz µS VDS = 15V, VGS = Ø V f = 1 kHz Dynamic Electrical Characteristics Forward Transconductance Re(Yfs) Common Source Forward Transadmittance Yfs Input Admittance Re(Yis) Output Conductance Re(Yos) Common Source Output Admittance Yos Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Output Capacitance 2500 3000 3000 6000 3500 3500 7000 4000 8000 100 f = 100 MHz µS VDS = 15V, VGS = ØV f = 100 MHz 1000 1000 µS VDS = 15V, VGS = ØV f = 400 MHz µS VDS = 15V, VGS = ØV f = 100 MHz 100 100 µS VDS = 15V, VGS = ØV f = 400 MHz 50 60 75 µS VDS = 15V, VGS = ØV f = 1 MHz 5 5 5 pF VDS = 15V, VGS = ØV f = 1 MHz Crss 1 1 1 pF VDS = 15V, VGS = ØV f = 1 MHz Coss 2 2 2 pF VDS = 15V, VGS = ØV f = 1 MHz 75 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMP5484, SMP5485, SMP5486 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com