RENESAS 2SB647

2SB647, 2SB647A
Silicon PNP Epitaxial
REJ03G0648-0200
(Previous ADE-208-1025)
Rev.2.00
Aug.10.2005
Application
• Low frequency power amplifier
• Complementary pair with 2SD667/A
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
2SB647
–120
–80
–5
–1
–2
2SB647A
–120
–100
–5
–1
–2
Unit
V
V
V
A
A
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
Tstg
0.9
150
–55 to +150
0.9
150
–55 to +150
W
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SB647, 2SB647A
Electrical Characteristics
(Ta = 25°C)
Collector to base
breakdown voltage
V(BR)CBO
2SB647
Min
Typ
–120
—
Collector to emitter
breakdown voltage
V(BR)CEO
–80
—
—
–100
—
Emitter to base
breakdown voltage
Collector cutoff current
DC current transfer ratio
V(BR)EBO
–5
—
—
–5
ICBO
hFE1*1
—
60
—
—
–10
320
hFE2
30
—
Collector to emitter
saturation voltage
Base to emitter voltage
VCE(sat)
—
VBE
Gain bandwidth product
fT
Item
Symbol
Max
—
2SB647A
Min
Typ
Max
–120
—
—
Unit
V
Test conditions
IC = –10 µA, IE = 0
—
V
IC = –1 mA, RBE = ∞
—
—
V
IE = –10 µA, IC = 0
—
60
—
—
–10
200
µA
VCB = –100 V, IE = 0
—
30
—
—
—
–1
—
—
–1
V
IC = –500 mA,
2
IB = –50 mA*
—
—
–1.5
—
—
–1.5
V
VCE = –5 V,
2
IC = –150 mA*
—
140
—
—
140
—
MHz
20
—
pF
Cob
—
20
—
—
Collector output
capacitance
Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SB647
—
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
—
Rev.2.00 Aug 10, 2005 page 2 of 5
VCE = –5 V,
2
IC = –150 mA*
VCE = –5 V,
2
IC = –500 mA*
VCE = –5 V,
IC = –150 mA
VCB = –10 V, IE = 0
f = 1 MHz
2SB647, 2SB647A
Main Characteristics
Typical Output Characteristics
–1.0
1.2
Collector current IC (A)
Collector power dissipation PC (W)
Maximum Collector Dissipation Curve
0.8
0.4
–120
0
–10
8
– 0
–6 0
–0.8
–4 0
– 30 2 0
–
– 10
–5
–2
–0.6
–0.4
PC
–0.2
50
100
–2
0
150
–100
–20
–10
25
–25
5°C
–50
Ta = 7
Collector current IC (mA)
DC current transfer ratio hFE
VCE = –5 V
Pulse
–200
–5
–2
–1
0
–0.2
–0.4
–0.6
–0.8
500
Ta = 75°C
300
25
200
–25
100
0
–1
–1.0
–1.2
–1.0
IC = 10 IB
Pulse
–0.8 VBE(sat) Ta = –25°C
25
75
–0.6
–0.4
–0.2
0
–1
Ta = 75°C
25
–25
VCE(sat)
–3
–10
–30
–100 –300 –1,000
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
–3
–10
–30
–100 –300 –1,000
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
Gain bandwidth product fT (MHz)
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
0
–10
400
Saturation Voltage
vs. Collector Current
–0.1
–8
VCE = –5 V
Pulse
Base to Emitter Voltage VBE (V)
–0.2
–6
600
–500
–0.3
–4
DC Current Transfer Ratio
vs. Collector Current
Typical Transfer Characteristics
–0.4
–0.5mA
Collector to Emitter Voltage VCE (V)
Ambient Tmperature Ta (°C)
–0.5
9W
IB = 0
0
–0.6
–1
= 0.
240
VCE = –5 V
200
160
120
80
40
0
–10
–30
–100
–300
Collector Current IC (mA)
–1,000
2SB647, 2SB647A
Collector output capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
200
f = 1 MHz
IE = 0
100
50
20
10
5
2
–1
–2
–5
–10
–20
–50 –100
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SB647, 2SB647A
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-51
PRSS0003DC-A
TO-92 Mod / TO-92 ModV
0.35g
4.8 ± 0.4
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Part Name
2SB647CTZ-E
2SB647DTZ-E
2SB647ABTZ-E
2SB647ACTZ-E
Quantity
2500
Shipping Container
Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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Colophon .3.0