To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS50SM-06 HIGH-SPEED SWITCHING USE FS50SM-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 r 4 2 f 3.2 19.5MIN. 2 1.0 q w 5.45 4.4 G e 5.45 0.6 2.8 4 wr ¡10V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 22mΩ ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) ............. 65ns q GATE w DRAIN e SOURCE r DRAIN q e TO-3P APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 50 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 200 50 A A IS ISM Source current Source current (Pulsed) 50 200 A A PD T ch Maximum power dissipation Channel temperature 70 –55 ~ +150 W °C –55 ~ +150 °C g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value 4.8 Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SM-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V Unit Min. Typ. Max. 60 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V — 17 22 mΩ ID = 25A, VDS = 10V — — 0.43 32 0.55 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 2300 570 — — pF pF — — 280 35 — — pF ns — — 95 95 — — ns ns ID = 25A, VGS = 10V VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs — 80 — ns — — 1.0 — 1.5 1.78 — 65 — V °C/W ns PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 50 100 150 200 100ms 101 7 5 3 2 1ms 10ms 100ms DC 100 7 TC = 25°C 5 Single Pulse 3 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 100 tw = 10ms 102 7 5 3 2 10V 8V 50 VGS = 20V 7V 80 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 8V TC = 25°C Pulse Test 60 6V 40 PD = 70W 20 6V 7V 40 PD = 70W 30 20 5V 10 TC = 25°C Pulse Test 5V 0 0 1 2 3 4 DRAIN-SOURCE VOLTAGE VDS (V) 5 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SM-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 1.2 ID = 80A 0.8 50A 0.4 20A 0 0 4 8 12 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) TC = 25°C VDS = 10V Pulse Test 20 20V 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C 101 7 5 4 3 2 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 Tch = 25°C VGS = 0V f = 1MHZ 104 102 7 5 3 2 VGS = 10V FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 103 7 5 3 2 20 TRANSFER CHARACTERISTICS (TYPICAL) 60 7 5 3 2 30 DRAIN CURRENT ID (A) 80 0 40 0 20 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 CAPACITANCE Ciss, Coss, Crss (pF) 16 50 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test Ciss Coss Crss SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω 2 td(off) 102 7 5 4 3 tf tr td(on) 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SM-06 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 10V 12 20V 40V 8 4 0 20 40 60 80 40 75°C 25°C 20 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C 60 GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 80 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 100 Tch = 25°C ID = 50A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10–1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999