To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY N I M I PREL FY6BGH-02F FY6BGH-02F . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FY6BGH-02F OUTLINE DRAWING Dimensions in mm ➄ 6.4 4.4 ➇ ➀ ➃ 3.0 1.1 0.275 0.65 ➁➂ ➃ ➀➇ ● DRAIN COMMON ● 2.5V DRIVE ● VDSS .................................................................................. 20V ● rDS (ON) (MAX) .............................................................. 25mΩ ● ID ........................................................................................... 6A ➁ ➂ ➅ ➆ SOURCE ➃ ➄ GATE ➀ ➇ DRAIN ➄ ➅➆ TSSOP8 APPLICATION Li - ion battery protection MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS Parameter Drain-source voltage VGSS ID Gate-source voltage Drain current IDM Drain current (Pulsed) IDA IS Avalanche current (Pulsed) Source current ISM PD Source current (Pulsed) Maximum power dissipation Tch Tstg Channel temperature Storage temperature — Weight Conditions VGS = 0V VDS = 0V L = 10µH Typical value Ratings 20 Unit V ±10 6 V A 42 A 6 1.3 A A 5.2 1.4 A W –55 ~ +150 –55 ~ +150 °C °C 0.035 g Sep. 2000 MITSUBISHI Nch POWER MOSFET ARY FY6BGH-02F IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som ELECTRICAL CHARACTERISTICS Symbol HIGH-SPEED SWITCHING USE (Tch = 25°C) Parameter V (BR) DSS Drain-source breakdown voltage V (BR) GSS Gate-source breakdown voltage IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) rDS (ON) Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr Rise time td (off) tf Turn-off delay time Fall time VSD Rth (ch-a) Source-drain voltage Thermal resistance trr Reverse recovery time Test conditions Limits Unit Min. Typ. Max. 20 ±10 — — — — V V — — — — ±10 0.1 µA mA 0.5 0.9 1.5 V — — 20 25 25 35 mΩ mΩ ID = 6A, VDS = 10V — — 0.120 15 0.150 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 1150 — — — pF pF — — — — — — pF ns — — — ns — — — — — — ns ns — — 0.85 — 1.1 89.3 V °C/W — 50 — ns ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 4V ID = 3A, VGS = 2.5V ID = 6A, VGS = 4V VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.3A, VGS = 0V Channel to ambient IS = 1.3A, dis/dt = –50A/µs Sep. 2000