RENESAS FY6BGH-02F

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI
POWER
MOSFET
MITSUBISHI
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FY6BGH-02F
FY6BGH-02F
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HIGH-SPEED
SWITCHING
USE
HIGH-SPEED
SWITCHING
USE
FY6BGH-02F
OUTLINE DRAWING
Dimensions in mm
➄
6.4
4.4
➇
➀
➃
3.0
1.1
0.275
0.65
➁➂
➃
➀➇
● DRAIN COMMON
● 2.5V DRIVE
● VDSS .................................................................................. 20V
● rDS (ON) (MAX) .............................................................. 25mΩ
● ID ........................................................................................... 6A
➁ ➂ ➅ ➆ SOURCE
➃ ➄ GATE
➀ ➇ DRAIN
➄
➅➆
TSSOP8
APPLICATION
Li - ion battery protection
MAXIMUM RATINGS
(Tc = 25°C)
Symbol
VDSS
Parameter
Drain-source voltage
VGSS
ID
Gate-source voltage
Drain current
IDM
Drain current (Pulsed)
IDA
IS
Avalanche current (Pulsed)
Source current
ISM
PD
Source current (Pulsed)
Maximum power dissipation
Tch
Tstg
Channel temperature
Storage temperature
—
Weight
Conditions
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Ratings
20
Unit
V
±10
6
V
A
42
A
6
1.3
A
A
5.2
1.4
A
W
–55 ~ +150
–55 ~ +150
°C
°C
0.035
g
Sep. 2000
MITSUBISHI Nch POWER MOSFET
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FY6BGH-02F
IMIN
PREL
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ELECTRICAL CHARACTERISTICS
Symbol
HIGH-SPEED SWITCHING USE
(Tch = 25°C)
Parameter
V (BR) DSS Drain-source breakdown voltage
V (BR) GSS Gate-source breakdown voltage
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
VGS (th)
Gate-source threshold voltage
rDS (ON)
rDS (ON)
Drain-source on-state resistance
Drain-source on-state resistance
VDS (ON)
yfs 
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
Rise time
td (off)
tf
Turn-off delay time
Fall time
VSD
Rth (ch-a)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Test conditions
Limits
Unit
Min.
Typ.
Max.
20
±10
—
—
—
—
V
V
—
—
—
—
±10
0.1
µA
mA
0.5
0.9
1.5
V
—
—
20
25
25
35
mΩ
mΩ
ID = 6A, VDS = 10V
—
—
0.120
15
0.150
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
1150
—
—
—
pF
pF
—
—
—
—
—
—
pF
ns
—
—
—
ns
—
—
—
—
—
—
ns
ns
—
—
0.85
—
1.1
89.3
V
°C/W
—
50
—
ns
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 4V
ID = 3A, VGS = 2.5V
ID = 6A, VGS = 4V
VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.3A, VGS = 0V
Channel to ambient
IS = 1.3A, dis/dt = –50A/µs
Sep. 2000