HAT1054R Silicon P Channel Power MOS FET High Speed Power Switching REJ03G1154-0300 (Previous: ADE-208-1224A) Rev.3.00 Sep 07, 2005 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 3 12 4 G 1, 3 2, 4 5, 6, 7, 8 4 S1 MOS1 Rev.3.00 Sep 07, 2005 page 1 of 7 5 6 D D S3 MOS2 Source Gate Drain HAT1054R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value –20 Unit V VGSS ID ±12 –6 V A –48 –6 A A Pch Note 3 Pch 2 3 W W Tch Tstg 150 –55 to +150 °C °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min –20 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±12 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±10 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS (off) — –0.4 — — –1 –1.4 µA V VDS = –20 V, VGS = 0 VDS = –10 V, ID = –1 mA Static drain to source on state resistance RDS (on) RDS (on) — — 24 35 30 50 mΩ mΩ ID = –3 A, VGS = –4.5 V Note 4 ID = –3 A, VGS = –2.5 V Forward transfer admittance Input capacitance |yfs| Ciss 6 — 10 1550 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 400 300 — — pF pF ID = –3 A, VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz Total gate charge Gate to source charge Qg Qgs — — 18 3 — — nC nC Gate to drain charge Turn-on delay time Qgd td (on) — — 6.5 25 — — nC ns Rise time Turn-off delay time tr td (off) — — 50 85 — — ns ns Fall time Body-drain diode forward voltage tf VDF — — 40 –0.85 — –1.10 ns V trr — 60 — ns Body-drain diode reverse recovery time Note: 4. Pulse test Rev.3.00 Sep 07, 2005 page 2 of 7 Test Conditions ID = –10 mA, VGS = 0 Note 4 Note 4 VDD = –10 V VGS = –4.5 V ID = –6 A VGS = –4.5 V, ID = –3 A, VDD ≅ –10 V RL = 3.3 Ω Rg = 4.7 Ω IF = –6 A, VGS = 0 IF = –6 A, VGS = 0 diF/dt = 20 A/µs Note 4 HAT1054R Main Characteristics Power vs. Temperature Derating 3.0 Drain Current Dr ive 2.0 Dr 1.0 ive ion at er Op 1 Op er –100 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Channel Dissipation Pch (W) 4.0 Maximum Safe Operation Area at ion 0 0 50 100 150 Ambient Temperature 200 10 µs –30 10 –10 1m PW DC 0 µs s = Op 10 era ms tio n( –1 Operation in PW No ≤ 1 te 5 this area is 0s –0.3 limited by R ) –3 DS (on) –0.1 Ta = 25°C –0.03 1 shot pulse 1 Drive Operation –0.01 –1 –3 –0.1 –0.3 –10 –30 –100 Drain to Source Voltage VDS (V) Ta (°C) Note 5: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics –20 Pulse Test Drain Current –12 ID (A) –16 Tc = –25°C –2.5 V –10 V –5 V –4 V –2 V –8 VGS = –1.5 V –4 75°C 25°C –16 –12 Drain Current ID (A) –20 –8 –4 VDS = –10 V Pulse Test 0 0 –2 –4 –6 –8 Drain to Source Voltage 0 0 –10 VDS (V) –0.16 –0.12 ID = –5 A –0.08 –2 A –0.04 –1 A 0 0 –2 –4 –6 Gate to Source Voltage Rev.3.00 Sep 07, 2005 page 3 of 7 –8 –10 VGS (V) –3 –4 –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) Pulse Test –2 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.20 –1 1 Pulse Test 0.5 0.2 0.1 0.05 VGS = –2.5 V 0.02 –4.5 V 0.01 –0.2 –0.5 –1 –2 Drain Current –5 –10 ID (A) –20 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT1054R 0.10 0.08 –1 A, –2 A 0.06 ID = –5 A VGS = –2.5 V 0.04 0.02 –1 A, –2 A, –5 A –4.5 V 0 –40 0 40 80 120 Case Temperature 160 20 Tc = –25°C 10 5 25°C 75°C 2 1 0.5 VDS = –10 V Pulse Test 0.2 –0.2 Tc (°C) 200 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 10000 100 50 20 Ciss 1000 Coss 300 Crss 100 VGS = 0 f = 1 MHz –1 –2 –5 –10 0 –20 –2 VDS VGS –20 –4 –30 –6 VDD = –10 V –5 V –8 –40 ID = –6 A 8 16 Gate Charge Rev.3.00 Sep 07, 2005 page 4 of 7 24 32 Qg (nc) –12 –16 –20 –10 40 –20 Reverse Drain Current IDR (A) –10 VGS (V) 0 VDD = –5 V –10 V –8 Reverse Drain Current vs. Source to Drain Voltage Gate to Source Voltage VDS (V) 0 –4 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics Drain to Source Voltage –10 –20 10 –0.5 Reverse Drain Current 0 –5 30 di / dt = 20 A / µs VGS = 0, Ta = 25°C –50 –2 Typical Capacitance vs. Drain to Source Voltage 500 5 –0.2 –1 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 10 –0.5 –16 –12 VGS = –5 V –8 0, 5 V –4 Pulse Test 0 0 –0.4 –0.8 –1.2 Source to Drain Voltage –1.6 VSD –2.0 (V) HAT1054R Switching Characteristics Switching Time t (ns) 500 200 tf td(off) 100 50 tr 20 td(on) 10 V = –4.5 V, V = –10 V GS DS Rg = 4.7 Ω, duty ≤ 1 % 5 –2 –5 –0.2 –0.5 –1 Drain Current –10 –20 ID (A) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.001 1s ho 0.0001 10 µ ls pu t D= PDM e PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.001 0.0001 10 µ D= PDM e uls tp ho 1s 100 µ PW T 1m 10 m 100 m 1 Pulse Width PW (S) Rev.3.00 Sep 07, 2005 page 5 of 7 PW T 10 100 1000 10000 HAT1054R Switching Time Waveform Switching Time Test Circuit Vin Vout Monitor Vin Monitor 10% D.U.T. Rg 90% RL 90% 90% Vin –4.5 V VDS = –10 V Vout td(on) Rev.3.00 Sep 07, 2005 page 6 of 7 10% tr 10% td(off) tf HAT1054R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name Quantity Shipping Container HAT1054R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. 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