HAT2199R Silicon N Channel Power MOS FET Power Switching REJ03G0063-0300 Rev.3.00 Sep.23.2004 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 13.0 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 D D D D 8 5 7 6 4 G 3 1 2 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current ID 11 Note1 Drain peak current ID(pulse) 88 Body-drain diode reverse drain current IDR 11 Avalanche current IAP Note 2 11 Avalanche energy EAR Note 2 12.1 Channel dissipation Pch Note3 2.0 Channel to ambient thermal impedance θch-a Note3 62.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Rev.3.00, Sep.23.2004, page 1 of 7 Unit V V A A A A mJ W °C/W °C °C HAT2199R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.3.00, Sep.23.2004, page 2 of 7 Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) Min 30 — — 1.0 — — 12 — — — — — — — — — — Typ — — — — 13.0 17.0 20 1060 255 85 1.5 7.5 3.1 1.8 8.0 16 37 Max — ±0.1 1 2.5 16.5 25.0 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns tf VDF trr — — — 3.6 0.84 18 — 1.10 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 5.5 A, VGS = 10 V Note4 ID = 5.5 A, VGS = 4.5 V Note4 ID = 5.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 11 A VGS = 10 V, ID = 5.5 A VDD ≅ 10 V RL = 1.81 Ω Rg = 4.7 Ω IF = 11 A, VGS = 0 Note4 IF = 11 A, VGS = 0 diF/ dt = 100 A/ µs HAT2199R Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 4.0 2.0 1.0 0 50 100 150 Ambient Temperature 200 Ta (°C) DC 10 Op PW era Drain Current Channel Dissipation 3.0 10 100 ID (A) Pch (W) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s µs 10 1m 0µ s s =1 tio 0m s n( 1 Operation in this area is 0.1 limited by RDS(on) PW < 1Note 0s 4 ) Ta = 25°C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 10 V 4.5 V 10 Pulse Test 8 8 ID (A) 2.7 V 6 2.6 V 4 2.5 V 2 VGS = 2.4 V 0 VDS = 10 V Pulse Test 2.8 V 2 4 6 Drain to Source Voltage 8 VDS Drain Current Drain Current ID (A) 10 Pulse Test 200 ID = 10 A 100 5A 50 0 2A 4 8 12 Gate to Source Voltage Rev.3.00, Sep.23.2004, page 3 of 7 16 VGS 25°C 2 –25°C 0 10 20 (V) Drain to Source On State Resistance RDS(on) (mΩ) VDS(on) (mV) Drain to Source Voltage 150 Tc = 75°C 4 (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 6 1 2 3 Gate to Source Voltage 5 4 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 VGS = 4.5 V 20 10 10 V 5 2 1 1 10 100 Drain Current ID (A) 1000 HAT2199R Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 ID = 2 A, 5 A, 10 A 30 20 VGS = 4.5 V 10 2 A, 5 A, 10 A 10 V 0 -25 1000 Tc = –25°C 100 10 25°C 75°C 1 VDS = 10 V Pulse Test 0.1 0 25 50 75 100 125 150 Case Temperature Tc (°C) 0.3 Body–Drain Diode Reverse Recovery Time Capacitance C (pF) Reverse Recovery Time trr (ns) 20 10 0.1 Ciss Coss 300 Crss 100 30 VGS = 0 f = 1 MHz 10 1 10 100 Reverse Drain Current IDR (A) 0 5 8 4 8 12 16 Gate Charge Qg (nc) Rev.3.00, Sep.23.2004, page 4 of 7 4 0 20 Switching Time t (ns) 12 VDD = 25 V 10 V 5V 10 25 30 (V) VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty < 1 % (V) VGS VDS 20 1000 VGS 16 VDD = 25 V 10 V 5V 15 Switching Characteristics 20 ID = 11 A 10 Drain to Source Voltage VDS Gate to Source Voltage (V) VDS Drain to Source Voltage 100 1000 di/dt = 100 A/µs VGS = 0, Ta = 25°C 40 0 30 3000 Dynamic Input Characteristics 20 10 10000 50 30 3 Typical Capacitance vs. Drain to Source Voltage 100 50 1 Drain Current ID (A) 100 td(off) td(on) 10 tf tr 1 0.1 1 Drain Current 10 ID 100 (A) HAT2199R Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage 10 V 8 Reverse Drain Current IDR Repetitive Avalanche Energy EAR (mJ) (A) 10 VGS = 0 V 5V 6 4 2 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 20 IAP = 11 A VDD = 15 V duty < 0.1 % Rg > 50 Ω 16 12 8 4 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 1 D=1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 uls θch - f(t) = γs (t) x θch - f θch - f = 100°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) e p ot h 1s PDM 0.001 D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 Pulse Width PW (s) Rev.3.00, Sep.23.2004, page 5 of 7 10 100 1000 10000 HAT2199R Avalanche Test Circuit Avalanche Waveform EAR = L V DS Monitor 1 2 L • IAP2 • VDSS VDSS - V DD I AP Monitor V (BR)DSS I AP Rg V DS VDD D. U. T ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vout Vin 10 V 10% 10% V DS = 10 V 90% td(on) Rev.3.00, Sep.23.2004, page 6 of 7 10% tr 90% td(off) tf HAT2199R Package Dimensions As of January, 2003 Unit: mm 3.95 4.90 5.3 Max 5 8 1 1.75 Max *0.22 ± 0.03 0.20 ± 0.03 4 0.75 Max + 0.10 6.10 – 0.30 1.08 *0.42 ± 0.08 0.40 ± 0.06 0.14 – 0.04 + 0.11 0˚ – 8˚ 1.27 + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms — 0.085 g Ordering Information Part Name HAT2199R-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Sep.23.2004, page 7 of 7 Sales Strategic Planning Div. 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