HAT1072H Silicon P Channel Power MOS FET Power Switching REJ03G1155-0700 (Previous: ADE-208-1534E) Rev.7.00 Sep 07, 2005 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 1, 2, 3 4 5 4 G 3 12 4 S S S 1 2 3 Rev.7.00 Sep 07, 2005 page 1 of 6 Source Gate Drain HAT1072H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value –30 Unit V VGSS ID –20 / +10 –40 V A –160 –40 A A 30 150 W °C –55 to +150 °C Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min –30 Typ — Max — Unit V Gate to source leak current Zero gate voltage drain current IGSS IDSS — — — — ±0.1 –1 µA µA VGS = –20, +10 V, VDS = 0 VDS = –30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) –0.5 — — 3.6 –2.0 4.5 V mΩ VDS = –10 V, ID = –1 mA Note 3 ID = –20 A, VGS = –10 V RDS (on) |yfs| — 36 5.3 60 7.7 — mΩ S ID = –20 A, VGS = –4.5 V Note 3 ID = –20 A, VDS = –10 V Input capacitance Output capacitance Ciss Coss — — 9500 1300 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 700 155 — — pF nC VDS = –10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 28 26 — — nC nC Turn-on delay time Rise time td (on) tr — — 28 60 — — ns ns Turn-off delay time Fall time td (off) tf — — 305 140 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.87 110 1.14 — V ns Forward transfer admittance Note: 3. Pulse test Rev.7.00 Sep 07, 2005 page 2 of 6 Test Conditions ID = –10 mA, VGS = 0 Note 3 VDD = –10 V VGS = –10 V ID = –40 A VGS = –10 V, ID = –20 A, VDD ≅ –10 V RL = 0.5 Ω Rg = 4.7 Ω IF = –40 A, VGS = 0 IF = –40 A, VGS = 0 diF/dt = 100 A/µs Note 3 HAT1072H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area –500 10 ID (A) –100 30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 1 m µs s =1 DC Op 0 ms era tion Operation in this area is limited by RDS (on) PW –10 –1 –0.1 Tc = 25°C 1 shot pulse 0 0 50 100 150 Ambient Temperature –0.01 –0.1 –0.3 200 –10 –40 –100 VDS = –10 V Pulse Test Pulse Test –2.8 V –30 –40 –2.6 V –10 Drain Current –30 –20 –20 Tc = 75°C 25°C –10 –25°C VGS = –2.2 V 0 0 –2 –4 –6 –8 Drain to Source Voltage 0 0 –10 VDS (V) Pulse Test –0.16 –0.12 ID = –20 A –0.08 –10 A –0.04 –5 A 0 –4 –8 –12 Gate to Source Voltage Rev.7.00 Sep 07, 2005 page 3 of 6 –16 –20 VGS (V) –2 –3 –4 –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) –0.20 –1 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 –30 –50 –10 V –4.5 V –3.5 V ID (A) ID (A) –3 Typical Transfer Characteristics –50 Drain Current –1 Drain to Source Voltage VDS (V) Tc (°C) Typical Output Characteristics Drain to Source Saturation Voltage VDS (on) (V) µs 10 100 Pulse Test 50 20 10 VGS = –4.5 V 5 –10 V 2 1 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) HAT1072H 20 Pulse Test 16 12 ID = –5 A, –10 A, –20 A 8 VGS = –4.5 V 4 –5 A, –10 A, –20 A –10 V 0 –40 0 40 80 Case Temperature 120 160 200 100 Tc = –25°C 30 25°C 10 75°C 3 1 VDS = –10 V Pulse Test 0.2 –0.1 –0.3 Tc (°C) 500 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 30000 200 100 50 di / dt = –100 A / µs VGS = 0, Ta = 25°C –3 –10 –30 Coss 100 VGS = 0 f = 1 MHz 0 VDD = –25 V –10 V –5 V –30 –12 –16 –40 VGS ID = –40 A 160 Gate Charge Rev.7.00 Sep 07, 2005 page 4 of 6 240 320 Qg (nc) –30 –40 –50 –20 400 VGS (V) 500 Switching Time t (ns) –8 VDS –20 Switching Characteristics –4 –20 –10 Drain to Source Voltage VDS (V) Gate to Source Voltage VDS (V) Drain to Source Voltage Crss 300 –100 0 VDD = –5 V –10 V –25 V 80 Ciss 1000 IDR (A) 0 0 –100 3000 Dynamic Input Characteristics –50 –30 30 –1 Reverse Drain Current –10 –10 Typical Capacitance vs. Drain to Source Voltage 1000 10 –0.1 –0.3 –3 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 20 –1 td(off) 200 100 tf tr 50 td(on) 20 10 VGS = –10 V, VDS = –10 V Rg = 4.7 Ω, duty ≤ 1 % 5 –0.1 –0.2 –0.5 –1 –2 Drain Current –5 –10 –20 –50 ID (A) HAT1072H Reverse Drain Current vs. Source to Drain Voltage –50 Reverse Drain Current IDR (A) Pulse Test –10 V –40 –5 V –30 VGS = 0 –20 –10 0 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage VSD –2.0 (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 4.17°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 0.0 0.01 10 µ 1 1s h p ot uls D= e PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Waveform Switching Time Test Circuit Vin Vout Monitor Vin Monitor 10% D.U.T. Rg 90% RL 90% 90% Vin –10 V VDS = –10 V Vout td(on) Rev.7.00 Sep 07, 2005 page 5 of 6 10% tr 10% td(off) tf HAT1072H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0° – 8° +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name Quantity Shipping Container HAT1072H-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.7.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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