H7N0307AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.3.00 Sep 07, 2005 page 1 of 6 2 3 S H7N0307AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 30 Unit V VGSS ID ±20 60 V A 240 60 A A 90 1.39 W °C/W 150 –55 to +150 °C °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel to case thermal impedance Pch θ ch-c Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 30 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IGSS IDSS — — — — ±10 10 µA µA VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 VGS (off) RDS (on) 1.0 — — 4.6 2.5 5.8 V mΩ ID = 1 mA, VDS = 10 V Note 3 ID = 30 A, VGS = 10 V |yfs| — 40 8.0 65 11.5 — mΩ S ID = 30 A, VGS = 4.5 V Note 3 ID = 30 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 2500 650 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 350 40 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 7 8 — — nC nC Turn-on delay time Rise time td (on) tr — — 20 300 — — ns ns Turn-off delay time Fall time td (off) tf — — 70 20 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.92 60 — — V ns Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Note: 3. Pulse test Rev.3.00 Sep 07, 2005 page 2 of 6 Test Conditions Note 3 Note 3 VDD = 10 V VGS = 10 V ID = 60 A VGS = 10 V, ID = 30 A RL = 0.33 Ω Rg = 4.7 Ω IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/dt = 50 A/µs H7N0307AB Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area (A) 500 ID 120 Drain Current Channel Dissipation Pch (W) 160 80 40 10 1m 100 DC 0 50 100 150 Case Temperature on = 10 ms Operation in this area is limited by RDS(on) 1 0.1 0.01 0.1 200 Tc (°C) 3 10 30 100 VDS (V) 50 10 V VDS = 10 V Pulse Test 3.5 V Pulse Test 4.5 V 40 1 Typical Transfer Characteristics ID (A) 50 0.3 Drain to Source Voltage Typical Output Characteristics ID (A) PW ati µs Tc = 25°C 1 shot Pulse 0 30 40 30 Drain Current Drain Current Op er 10 s 100 µs 20 3V 10 25°C 20 Tc = 75°C –25°C 10 VGS = 2.5 V 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 VDS (V) 0.16 0.08 ID = 10 A 0.04 5A 2A 0 0 4 8 12 Gate to Source Voltage Rev.3.00 Sep 07, 2005 page 3 of 6 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) VDS(on) (V) Drain to Source Voltage 0.12 Pulse Test 2 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 1 100 Pulse Test 50 20 VGS = 4.5 V 10 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) H7N0307AB 20 Pulse Test 16 ID = 2 A, 5 A, 10 A 12 VGS = 4.5 V 8 2 A, 5 A, 10 A 4 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 100 Tc = –25°C 30 75°C 10 25°C 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 500 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 10000 200 100 50 1000 Coss 300 Crss 100 1 3 10 30 100 16 40 VDD = 25 V 10 V 12 5V VDS 20 8 10 4 VDD = 25 V 10 V 5V 0 20 40 Gate Charge Rev.3.00 Sep 07, 2005 page 4 of 6 60 80 Qg (nc) 30 40 50 0 100 500 Switching Time t (ns) VGS VGS (V) ID = 60 A 20 Switching Characteristics 20 50 10 Drain to Source Voltage VDS (V) IDR (A) Gate to Source Voltage VDS (V) VGS = 0 f = 1 MHz 0 Dynamic Input Characteristics Drain to Source Voltage 100 10 0.3 Reverse Drain Current 0 30 Ciss 30 di / dt = 50 A / µs VGS = 0, Ta = 25°C 30 10 Typical Capacitance vs. Drain to Source Voltage 1000 10 0.1 3 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time 20 1 0.3 200 100 tr td(off) 50 td(on) 20 tf 10 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 5 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 H7N0307AB Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 100 80 10 V 60 VGS = 0 5V 40 20 Pulse Test 0 0 0.4 0.8 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 1.38°C/W, Tc = 25°C 0.1 0.05 0.02 0.03 PDM 1 e 0.0 puls t o h 1s D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.3.00 Sep 07, 2005 page 5 of 6 10% RL tr 90% td(off) tf H7N0307AB Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 Max 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 0.5 ± 0.1 Ordering Information Part Name Quantity Shipping Container H7N0307AB-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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