Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
JCT1675 Series
75A SCRs
Rev.2.0
DESCRIPTION:
JCT1675 series of silicon controlled rectifiers,
with high ability to withstand the shock loading
of large current, provide high dv/dt rate with
strong resistance to electromagnetic
interference. They are especially recommended
for use on solid state relay, motorcycle, power
1
2
charger, T-tools etc.
3
TO-247S
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
75
A
VDRM /VRRM
1600
V
IGT
10 - 80
mA
A(2)
K(1)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage(Tj=25℃)
VDRM
1600
V
Repetitive peak reverse voltage(Tj=25℃)
VRRM
1600
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM +100
V
Non repetitive peak reverse voltage
VRSM
VRRM +100
V
Average on-state current (TC=80℃)
IT(AV)
48
A
IT(RMS)
75
A
ITSM
750
A
I2t
2800
A2s
dI/dt
150
A/μs
IGM
4
A
Storage junction temperature range
Operating junction temperature range
RMS on-state current (TC=80℃)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
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JCT1675 Series
JieJie Microelectronics CO. , Ltd
Average gate power dissipation
Peak gate power
PG(AV)
1
W
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
IGT
VGT
VGD
Test Condition
Unit
MIN.
TYP.
MAX.
10
-
80
mA
-
-
1.5
V
0.25
-
-
V
VD=12V RL=33Ω
VD=VDRM Tj=125℃ RL=3.3KΩ
IL
IG=1.2IGT
-
-
150
mA
IH
IT=1A
-
-
120
mA
1000
-
-
V/μs
Value(MAX)
Unit
Tj=25℃
1.8
V
Tj=25℃
50
μA
Tj=125℃
10
mA
Value
Unit
0.68
℃/W
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=100A tp=380μs
VD=VDRM VR=VRRM
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
junction to case(AC)
ORDERING INFORMATION
J
CT
16
75
CS
JieJie Microelectronics Co.,Ltd
CS:TO-247S
SCRs
16:VDRM/VRRM≥1600V
TEL：+86-513-83639777
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IT(RMS):75A
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JCT1675 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
A
H
Ref.
Millimeters
Min.
D
B
P
J
K
G
C
E
F
L
TO-247S
A
15.1
16.1
0.594
0.634
20.8
0.78
0.819
13.8
14.8
0.543
0.583
D
3.00
4.00
0.118
0.157
E
2.75
3.35
0.108
0.132
F
1.30
1.50
0.051
0.059
G
5.10
5.80
0.201
0.228
H
4.50
5.50
0.177
0.217
J
1.45
2.15
0.057
0.085
K
1.90
2.80
0.075
0.110
L
0.55
0.80
0.022
0.031
P
2.00
2.40
0.079
0.094
FIG.2: RMS on-state current versus case
temperature
100
75
80
60
60
45
40
30
20
15
60
Max.
19.8
IT(RMS) (A)
90
IT(RMS) (A)
30
45
Typ.
Min.
B
P(w)
120
15
Inches
Max.
C
FIG.1 Maximum power dissipation versus RMS
on-state current
0
0
Typ.
0
0
75
FIG.3: Surge peak on-state current versus
number of cycles
α=180°
Tc (℃)
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
ITSM (A)
700
770
tp=10ms
One cycle
660
Tj=125℃
550
100
440
330
10
220
110
0
1
Tj=25℃
10
Number of cycles
100
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1
0
1
2
VTM (V)
3
4
5
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JCT1675 Series
JieJie Microelectronics CO. , Ltd
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I2 t (dI/dt < 150A/μs)
ITSM (A), I2 t (A2 s)
7000
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
I2 t
ITSM
2.5
1000
2.0
1.5
dI/dt
100
IGT
IH&IL
1.0
0.5
10
0.01
tp(ms)
0.1
1
10
0.0
-40
Tj(℃)
-20
0
20
40
60
80
100
120 140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the second version which is made in 20-Nov.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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