BTA(B)20 BW/CW

BTA20 BW/CW
BTB20 BW/CW
SNUBBERLESS TRIACS
TO-220AB
FEATURES
High commutation: (dI/dt)c > 18A/ms
without snubber
High surge current: ITSM = 200A
VDRM up to 800V
BTA Family:
Insulating voltage = 2500V(RMS)
(UL recognized: E81734)
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DESCRIPTION
The BTA/BTB20 BW/CW triac family are high performance glass passivated chips technology.
The SNUBBERLESS concept offer suppression
of RC network and it is suitable for application such
as phase control and static switching on inductive
or resistive load.
A2
G
A1
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current (360° conduction angle)
BTA
Tc = 70°C
BTB
Tc = 90°C
Value
Unit
20
A
A
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tp = 8.3ms
210
tp = 10ms
200
I2t value
tp = 10ms
200
A2s
Critical rate of rise of on-state current
Gate supply: IG = 500mA dIG/dt = 1A/µs
Repetitive
F = 50Hz
20
A/µs
Non repetitive
100
Storage and operating junction temperature range
Maximum lead soldering temperature during 10s at 4.5mm from case
-40 to +150
-40 to +125
°C
260
°C
BTA/BTB20-...BW/CW
Symbol
VDRM
VRRM
2014-6-10
Parameter
Unit
Repetitive peak off-state voltage Tj = 125°C
1
600
700
600
700
V
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BTA(B)20 BW/CW
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-a)
Value
Unit
60
°C/W
BTA
2.8
°C/W
BTB
1.7
BTA
2.1
BTB
1.3
Junction to ambient
Rth (j-c) DC
Rth (j-c) AC
Junction to case for DC
Junction to case for 360° conduction angle (F = 50Hz)
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1W PGM = 10W (tp = 20µs) IGM = 4A (tp = 20µs)
°C/W
VGM = 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS
BTA / BTB20
Symbol
IGT
Test conditions
VD = 12V (DC)
RL = 33Ω
Quadrant
Tj = 25°C
I - II - III
Unit
BW
CW
MIN.
2
1
MAX.
50
35
mA
VGT
VD = 12V (DC)
RL = 33Ω
Tj = 25°C
I - II - III
MAX.
1.5
V
VGD
VD = VDRM
RL = 3.3kΩ
Tj =125°C
I - II - III
MIN.
0.2
V
2
µs
tgt
VD = VDRM IG = 500mA
dIG/dt = 3A/µs
Tj = 25°C
I - II - III
TYP.
IL
IG = 1.2IGT
Tj = 25°C
I - III
TYP.
50
-
90
-
MAX.
-
80
75
50
II
I - II - III
IH*
mA
IT = 500mA Gate open
Tj = 25°C
MAX.
VTM *
ITM = 28A
Tj = 25°C
MAX.
1.70
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj = 25°C
MAX.
0.01
mA
Tj = 125°C
MAX.
3
Tj = 125°C
TYP.
750
500
MIN.
500
250
TYP.
36
22
MIN.
18
11
dV/dt *
(dI/dt)c*
tp = 380µs
Linear slope up to
VD = 67% VDRM gate open
Without snubber
Tj = 125°C
mA
V/µs
A/ms
* For either polarity of electrode A2 voltage with reference to electrode A1
2014-6-10
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BTA(B)20 BW/CW
PRODUCT INFORMATION
IT(RMS)
VDRM / VRRM
A
V
BW
CW
20
600
X
X
700
X
X
Sensitivity Specification
Package
BTA
(Insulated)
BTB
(Uninsulated)
600
X
ORDERING INFORMATION
BT
A
20
-
Triac
Series
600
BW
Sensitivity
Insulation:
A: insulated
B: non insulated
Voltage:
600: 600V
700: 700V
Current: 20A
2014-6-10
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BTA(B)20 BW/CW
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTB).
Fig. 4: RMS on-state current versus case temperature.
Fig. 5: Relative variation of thermal impedance
versus pulse duration.
Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
tp(s)
0.01
1E-3
2014-6-10
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
4
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BTA(B)20 BW/CW
Fig. 7: Non repetitive surge peak on-state current
versus number of cycles.
Fig. 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t.
Fig. 9: On-state characteristics (maximum values).
2014-6-10
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