BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS TO-220AB FEATURES ■ ■ ■ Very low IGT = 10mA max Low IH = 15mA max BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. Dimensions in inches and (millimeters) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Parameter RMS on-state current (360° conduction angle) BTA Tc = 90°C BTB Tc = 95°C Value Unit 4 A A Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 42 tp = 10ms 40 I2t value tp = 10ms 8 A2s Critical rate of rise of on-state current Gate supply: IG = 50mA dIG/dt = 0.1A/µs Repetitive F = 50Hz 10 A/µs Non repetitive 50 Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case -40 to +150 -40 to +110 °C 260 °C BTA / BTB04Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 110°C http://www.luguang.cn Unit 400 T/D/S/A 600 T/D/S/A 700 T/D/S/A 400 600 700 Email:[email protected] V BTA04 T/D/S/A BTB04 T/D/S/A THERMAL RESISTANCE Symbol Parameter Rth (j-a) Value Unit 60 °C/W BTA 4.4 °C/W BTB 3.2 BTA 3.3 BTB 2.4 Junction to ambient Rth (j-c) DC Rth (j-c) AC Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) °C/W VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB04 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Quadrant Tj = 25°C Unit T D S A I - II - III MAX. 5 5 10 10 IV MAX. 5 10 10 25 mA VGT VD = 12V (DC) RL = 33Ω Tj = 25°C I - II - III - IV MAX. 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj =110°C I - II - III - IV MIN. 0.2 V 2 µs tgt VD = VDRM IG = 40mA dIG/dt = 0.5A/µs Tj = 25°C I - II - III - IV TYP. IL IG = 1.2IGT Tj = 25°C I - III - IV TYP. II IH* 10 10 20 20 20 20 40 40 15 15 25 25 mA IT = 100mA Gate open Tj = 25°C MAX. VTM * ITM = 5.5A Tj = 25°C MAX. 1.65 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 0.75 Tj = 110°C TYP. 10 10 - - MIN. - - 10 10 TYP. 1 1 5 5 dV/dt * (dI/dt)c* tp = 380µs Linear slope up to VD = 67% VDRM gate open (dI/dt)c = 1.8A/ms Tj = 110°C * For either polarity of electrode A2 voltage with reference to electrode A1 http://www.luguang.cn Email:[email protected] mA V/µs V/µs BTA04 T/D/S/A BTB04 T/D/S/A PRODUCT INFORMATION IT(RMS) VDRM / VRRM A V T 4 400 X 600 X 700 X 400 X 600 X Sensitivity Specification Package BTA (Insulated) BTB (Uninsulated) D S X X X X X ORDERING INFORMATION BT A Triac Series 04 - 400 T Sensitivity Insulation: A: insulated B: non insulated Current: 04A http://www.luguang.cn A Voltage: 400: 400V 600: 600V 700: 700V Email:[email protected] BTA04 T/D/S/A BTB04 T/D/S/A Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4: RMS on-state current versus case temperature. Fig. 5: Relative variation of thermal impedance versus pulse duration. Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 http://www.luguang.cn 1E+2 5E+2 Email:[email protected] BTA04 T/D/S/A BTB04 T/D/S/A Fig. 7: Non repetitive surge peak on-state current versus number of cycles. Fig. 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 9: On-state characteristics (maximum values). http://www.luguang.cn Email:[email protected]