IRF9540NS/L l l l l l l l Advanced Process Technology Surface Mount (IRF9540S) Low-profile through-hole (IRF9540L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9540L) is available for lowprofile applications. D VDSS = -100V RDS(on) = 0.117Ω G ID = -23A S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Units -23 -16 -76 3.8 140 0.91 ± 20 430 -11 14 -5.0 -55 to + 175 A W W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA 2014-8-38 Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** 1 Typ. Max. Units ––– ––– 1.1 40 °C/W www.kersemi.com IRF9540NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -100 ––– ––– -2.0 5.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 15 67 51 51 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 1300 400 240 V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.117 Ω VGS = -10V, ID = -11A -4.0 V VDS = VGS, ID = -250µA ––– S VDS = -50V, ID = -11A -25 VDS = -100V, VGS = 0V µA -250 VDS = -80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 97 ID = -11A 15 nC VDS = -80V 51 VGS = -10V, See Fig. 6 and 13 ––– VDD = -50V ––– ID = -11A ns ––– RG = 5.1Ω ––– RD = 4.2Ω, See Fig. 10 Between lead, nH ––– and center of die contact ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS I SM V SD t rr Q rr ton Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -23 showing the A G integral reverse ––– ––– -76 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -11A, VGS = 0V ––– 150 220 ns TJ = 25°C, IF = -11A ––– 830 1200 nC di/dt = -100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 7.1mH Uses IRF9540N data and test conditions RG = 25Ω, I AS = -11A. (See Figure 12) ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2014-8-38 2 www.kersemi.com IRF9540NS/L 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5 V 20 µ s P U L S E W ID TH T c = 25 °C A 1 0.1 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A ) -ID , D rain-to-S ource C urrent (A ) TOP 1 10 10 -4 .5V 2 0µ s P U LS E W ID TH T C = 1 75 °C 1 100 0.1 1 -VD S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics 2.5 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) -I D , D rain-to -So urc e C urre nt (A ) 100 TJ = 25 °C TJ = 1 7 5°C 10 1 V DS = -2 5 V 2 0µ s P U L S E W ID TH 4 5 6 7 8 9 10 I D = -19 A 2.0 1.5 1.0 0.5 VG S = -1 0V 0.0 A -60 -VG S , Ga te -to-Source Volta ge (V) -40 -20 0 20 40 60 80 Fig 4. Normalized On-Resistance Vs. Temperature 3 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 3. Typical Transfer Characteristics 2014-8-38 A 100 -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics 0.1 10 www.kersemi.com IRF9540NS/L 20 V GS C is s C rs s C o ss C , Capacitanc e (pF ) 2500 2000 = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd -V G S , G ate-to-S ource V oltage (V ) 3000 C iss 1500 C oss 1000 C rss 500 0 10 V D S = -80 V V D S = -50 V V D S = -20 V 16 12 8 4 FO R TE S T CIR C U IT S E E FIG U R E 1 3 0 A 1 I D = -1 1A 0 100 20 60 80 A 100 Q G , Total G ate C harge (nC ) -VD S , D rain-to-S ourc e V oltage (V ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) -I D , D rain C urrent (A ) -I S D , Reverse D rain Current (A ) 40 10 T J = 17 5°C T J = 2 5°C 1 V G S = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 A 10 0µs 10 1m s T C = 25 °C T J = 17 5°C S ing le P u lse 1 1.6 1 -VS D , S ourc e-to-D rain V oltage (V ) 10m s A 10 100 1000 -VD S , D rain-to-S ourc e V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 2014-8-38 100 Fig 8. Maximum Safe Operating Area 4 www.kersemi.com IRF9540NS/L 25 RD VDS I D , Drain Current (A) 20 VGS D.U.T. RG + 15 V DD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 10% 175 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 2014-8-38 5 www.kersemi.com IRF9540NS/L E A S , S ingle P ulse A valanche E nergy (m J) 1200 L VDS D .U .T RG A IA S -2 0 V tp VD D D R IV E R 0 .0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit TO P 1000 B O TTO M 800 600 400 200 0 A 25 IAS ID -4 .7A -8 .1A -11 A 50 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA IG Charge ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 2014-8-38 .2µF Fig 13b. Gate Charge Test Circuit 6 www.kersemi.com IRF9540NS/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS 2014-8-38 7 www.kersemi.com IRF9540NS/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 15 .4 9 (.6 10) 14 .7 3 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak A PART NUM BER LO G O F530S 9 24 6 9B 1M A S S E M B LY LO T C O D E 2014-8-38 8 DATE CODE (Y YW W ) YY = Y E A R W W = W EEK www.kersemi.com IRF9540NS/L Package Outline TO-262 Outline Part Marking Information TO-262 2014-8-38 9 www.kersemi.com IRF9540NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 .60 (.06 3) 1 .50 (.05 9) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 .6 5 (.0 6 5 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 .75 (.06 9 ) 1 .25 (.04 9 ) 10 .9 0 (.42 9) 10 .7 0 (.42 1) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .10 (.63 4 ) 15 .90 (.62 6 ) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. 60.00 (2.3 62) MIN . NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 2014-8-38 26 .40 (1.03 9) 24 .40 (.961 ) 3 10 3 0.40 (1.1 97) MAX. 4 www.kersemi.com