KERSEMI IRF9530N

IRF9530N
HEXFET® Power MOSFET
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
D
VDSS = -100V
RDS(on) = 0.20Ω
G
ID = -14A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-14
-10
-56
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
1/8
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.9
–––
62
°C/W
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IRF9530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-100
–––
–––
-2.0
3.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
58
45
46
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
760
260
170
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.20
Ω
VGS = -10V, ID = -8.4A „
-4.0
V
VDS = V GS, ID = -250µA
–––
S
VDS = -50V, ID = -8.4A
-25
VDS = -100V, VGS = 0V
µA
-250
VDS = -80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
58
ID = -8.4A
8.3
nC
VDS = -80V
32
VGS = -10V, See Fig. 6 and 13 „
–––
VDD = -50V
–––
ID = -8.4A
ns
–––
RG = 9.1Ω
–––
RD = 6.2Ω, See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -14
showing the
A
G
integral reverse
––– ––– -56
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -8.4A, VGS = 0V „
––– 130 190
ns
TJ = 25°C, I F = -8.4A
––– 650 970
nC
di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 7.0mH
ƒ ISD ≤ -8.4A, di/dt ≤ -490A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -8.4A. (See Figure 12)
2/8
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IRF9530N
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , D rain-to-S ource C urrent (A )
-ID , D rain-to-S ou rc e C urre nt (A )
TO P
10
-4.5 V
1
2 0µ s P U LS E W ID TH
T c = 2 5°C
A
0.1
0.1
1
10
10
-4.5V
1
2 0µ s P U LS E W ID T H
T C = 1 75 °C
0.1
100
0.1
-VD S , D rain-to-S ourc e V oltage (V )
2.5
TJ = 1 7 5 °C
1
V DS = -5 0 V
2 0µ s P U L S E W ID TH
5
6
7
8
9
Fig 3. Typical Transfer Characteristics
3/8
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , D rain-to-S ource C urrent (A)
T J = 2 5 °C
10
-VG S , Ga te -to-Source Volta ge (V)
A
100
Fig 2. Typical Output Characteristics
100
4
10
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
0.1
1
A
10
ID = -14A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF9530N
V GS
C iss
C rs s
C o ss
C , Capacitance (pF)
1600
1200
=
=
=
=
20
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
-VGS , Gate-to-Source Voltage (V)
2000
C iss
800
C oss
C rss
400
0
10
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100
10
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
T J = 15 0°C
-II D , Drain Current (A)
-I S D , Reverse D rain Current (A )
20
QG , Total Gate Charge (nC)
-VD S , D rain-to-S ourc e V oltage (V )
10
100
T J = 25 °C
1
10us
100us
10
1ms
V G S = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
-VS D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4/8
VDS =-80V
VDS =-50V
VDS =-20V
15
A
1
ID = -8.4A
A
1.6
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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1000
IRF9530N
14
RD
VDS
-ID , Drain Current (A)
12
VGS
D.U.T.
RG
10
+
8
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
2
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5/8
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1
IRF9530N
700
D .U .T
RG
A
IA S
-2 0 V
tp
VD D
D R IV E R
0 .0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
ID
-3.4A
-5.9A
BOTTOM -8.4A
TOP
600
500
400
300
200
100
0
25
IAS
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
VGS
VG
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6/8
+VDS
Fig 13b. Gate Charge Test Circuit
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175
IRF9530N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
7/7
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