KSMD7N60 / KSMU7N60 600V N-Channel MOSFET D-PAK Features I-PAK FCD Series FCU Series • 650V @TJ = 150°C • Typ. Rds(on)=0.53Ω • Ultra low gate charge (typ. Qg=23nC) • Low effective output capacitance (typ. Coss.eff=60pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G S Absolute Maximum Ratings Symbol KSMD7N60/KSMU7N60 Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage (Note 1) Unit 600 V 7 4.4 A A 21 A ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation 83 0.67 W W/°C -55 to +150 °C 300 °C KSMD7N60/KSMU7N60 Unit (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 1.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 83 °C/W 2014-9-17 1 www.kersemi.com KSMD7N60 / KSMU7N60 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity KSMD7N60 KSMD7N60TM D-PAK 380mm 16mm 2500 KSMD7N60 KSMD7N60TF D-PAK 380mm 16mm 2000 KSMU7N60 KSMU7N60 I-PAK - - 70 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 7A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.53 0.6 Ω -- 6 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3.5A gFS Forward Transconductance VDS = 40V, ID = 3.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 710 920 pF -- 380 500 pF Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 34 -- pF -- 22 29 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 60 -- pF VDD = 300V, ID = 7A RG = 25Ω -- 35 80 ns -- 55 120 ns -- 75 160 ns -- 32 75 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 7A VGS = 10V (Note 4, 5) -- 23 30 nC -- 4.2 5.5 nC -- 11.5 -- nC -- -- 7 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V trr Reverse Recovery Time 360 -- ns Reverse Recovery Charge VGS = 0V, IS = 7A dIF/dt =100A/µs -- Qrr -- 4.5 -- µC 2014-9-17 2 (Note 4) www.kersemi.com KSMD7N60 / KSMU7N60 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 ID , Drain Current [A] ID, Drain Current [A] 1 10 0 10 10 o 150 C o 25 C 0 10 o -55 C * Notes : 1. 250µs Pulse Test o 2. TC = 25 C -1 10 * Note 1. VDS = 40V 2. 250µs Pulse Test -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.0 IDR , Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1.8 1.6 1.4 VGS = 10V 1.2 1.0 0.8 0.6 VGS = 20V 0.4 0.2 0.0 1 10 0 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250µs Pulse Test o * Note : TJ = 25 C -1 0 5 10 15 10 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) 12 Coss = Cds + Cgd VDS = 100V VGS, Gate-Source Voltage [V] Capacitance [pF] Crss = Cgd 2000 Coss 1000 * Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz Crss 0 -1 10 0 10 1 10 2014-9-17 VDS = 400V 8 6 4 2 * Note : ID = 7A 0 VDS, Drain-Source Voltage [V] VDS = 250V 10 0 5 10 15 20 25 o QG, Total Gate Charge [ C] 3 www.kersemi.com KSMD7N60 / KSMU7N60 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0V 0.9 2. ID = 250µA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 3.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 100 µs 1 7.5 ID, Drain Current [A] ID, Drain Current [A] 200 10.0 10 1 ms 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 150 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 10 100 o Figure 9. Maximum Safe Operating Area 10 50 TJ, Junction Temperature [ C] 5.0 2.5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0.0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 0 .2 * N o te s : o 1 . Z θ J C (t) = 1 .5 C /W M a x. 0 .1 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 3 . T JM - T C = P D M * Z θ JC (t) 0 .0 2 PDM 0 .0 1 t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 2014-9-17 4 www.kersemi.com KSMD7N60 / KSMU7N60 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 2014-9-17 5 www.kersemi.com KSMD7N60 / KSMU7N60 Peak Diode Recovery dv/dt Test Circuit & Waveforms 2014-9-17 6 www.kersemi.com KSMD7N60 / KSMU7N60 Mechanical Dimensions D-PAK 2014-9-17 7 www.kersemi.com KSMD7N60 / KSMU7N60 Package Dimensions (Continued) I-PAK 2014-9-17 8 www.kersemi.com