KSMD2P25 / KSMU2P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.0A, -250V, RDS(on) = 4.0Ω @VGS = -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These P-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S ! G! ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter KSMD2P25 / KSMU2P25 Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -250 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Units V -2.0 A -1.27 A -8.0 A ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) -2.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 3.7 -5.5 2.5 mJ V/ns W 37 0.29 -55 to +150 W W/°C °C 300 °C dv/dt PD (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Typ Max Units Thermal Resistance, Junction-to-Case -- 3.4 °CW Thermal Resistance, Junction-to-Ambient * -- 50 °CW Thermal Resistance, Junction-to-Ambient -- 110 °CW * When mounted on the minimum pad size recommended (PCB Mount) 2014-7-16 1 www.kersemi.com KSMD2P25 / KSMU2P25 Electrical CharacteristicsT Symbol C = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.2 -- V/°C -1 µA µA IDSS Zero Gate Voltage Drain Current VDS = -250 V, VGS = 0 V -- -- VDS = -200 V, TC = 125°C -- -- -10 IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.0 A -- 3.15 4.0 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.0 A -- 1.1 -- S -- 190 250 pF -- 40 55 pF -- 6.5 8.5 pF -- 8.5 25 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -125 V, ID = -2.3 A, RG = 25 Ω (Note 4, 5) VDS = -200 V, ID = -2.3 A, VGS = -10 V (Note 4, 5) -- 40 90 ns -- 12 35 ns -- 25 60 ns -- 6.5 8.5 nC -- 1.8 -- nC -- 3.0 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.0 ISM -- -- -8.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.0 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time -- 110 -- ns Qrr Reverse Recovery Charge -- 0.4 -- µC VGS = 0 V, IS = -2.3 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 48mH, IAS = -2.0A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD -2.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature 2014-7-16 2 www.kersemi.com KSMD2P25 / KSMU2P25 Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 0 -ID , Drain Current [A] Top : -I D, Drain Current [A] 10 -1 10 0 10 150 25 -55 Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = -40V 2. 250s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 12 -IDR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 15 VGS = - 10V 9 VGS = - 20V 0 10 6 3 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 0 0.0 -1 1.5 3.0 4.5 10 6.0 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 VDS = -50V 300 -VGS, Gate-Source Voltage [V] 10 Capacitances [pF] 1.0 -ID , Drain Current [A] Ciss Coss 200 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 100 VDS = -125V VDS = -200V 8 6 4 2 Note : ID = -2.3 A 0 -1 10 0 0 10 1 0 10 Figure 5. Capacitance Characteristics 2014-7-16 1 2 3 4 5 6 7 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.kersemi.com KSMD2P25 / KSMU2P25 Typical Characteristics (Continued) 2.5 1.2 -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.0 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -1.15 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 10 -I D, Drain Current [A] -I D, Drain Current [A] 1.5 100 µs 1 ms 10 ms 0 DC 10 -1 10 Notes : 1.0 0.5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 0.0 25 2 10 10 50 ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 N o te s : 1 . Z J C ( t) = 3 .4 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 -1 0 .0 1 10 -5 t1 s i n g l e p u ls e Z JC 75 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 2014-7-16 4 www.kersemi.com KSMD2P25 / KSMU2P25 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on td(on) VDD VGS VGS RG t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID VDD RG VDD IAS BVDSS tp 2014-7-16 VDS (t) ID (t) DUT -10V Time 5 www.kersemi.com KSMD2P25 / KSMU2P25 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt 2014-7-16 6 www.kersemi.com KSMD2P25 / KSMU2P25 Package Dimensions DPAK MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.30 ±0.10 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 2014-7-16 7 www.kersemi.com KSMD2P25 / KSMU2P25 Package Dimensions (Continued) IPAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.76 ±0.10 2.30TYP [2.30±0.20] 2014-7-16 0.50 ±0.10 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 (0.50) 9.30 ±0.30 MAX0.96 (4.34) 1.80 ±0.20 0.80 ±0.10 0.60 ±0.20 (0.50) 0.50 ±0.10 2.30TYP [2.30±0.20] 8 www.kersemi.com