KSMF19N10 100V N-Channel MOSFET TO-220F Features • • • • • • • 13.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol VDSS ID D ! " G! ! " " " ! S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current KSMF19N10 100 Units V 13.6 A - Continuous (TC = 100°C) 9.6 A 54.4 A IDM Drain Current VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ IAR Avalanche Current (Note 1) 13.6 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 3.8 6.0 38 0.25 -55 to +175 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 2014-6-29 1 Typ -- Max 3.95 Units °C/W -- 62.5 °C/W www.kersemi.com KSMF19N10 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.1 VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 150°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.078 0.1 Ω -- 10 -- S pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.8 A gFS Forward Transconductance VDS = 40 V, ID = 6.8 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 600 780 -- 165 215 pF -- 32 40 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 19 A, RG = 25 Ω (Note 4, 5) VDS = 80 V, ID = 19 A, VGS = 10 V (Note 4, 5) -- 7.5 25 ns -- 150 310 ns -- 20 50 ns -- 65 140 ns -- 19 25 nC -- 3.9 -- nC -- 9.0 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 13.6 A ISM -- -- 54.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 13.6 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 78 -- ns Qrr Reverse Recovery Charge -- 200 -- nC VGS = 0 V, IS = 19 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.8mH, IAS = 13.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2014-6-29 2 www.kersemi.com KSMF19N10 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 175℃ 0 25℃ 10 -55℃ ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 0.30 0.24 VGS = 10V 0.18 VGS = 20V 0.12 0.06 1 10 0 10 175℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0.00 0 20 40 60 10 80 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VGS, Gate-Source Voltage [V] 1200 Capacitance [pF] 0.2 ID , Drain Current [A] Ciss 900 Coss 600 ※ Notes : Crss 1. VGS = 0 V 2. f = 1 MHz 300 VDS = 50V VDS = 80V 8 6 4 2 ※ Note : ID = 19A 0 -1 10 0 0 10 0 1 10 Figure 5. Capacitance Characteristics 2014-6-29 4 8 12 16 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.kersemi.com KSMF19N10 Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 9.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 15 Operation in This Area is Limited by R DS(on) 2 10 1 ms ID, Drain Current [A] ID, Drain Current [A] 12 100 µs 10 ms 1 10 100 ms DC 0 10 ※ Notes : 9 6 3 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C ( t ) = 3 . 9 5 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 θ JC ( t) , T h e r m a l R e s p o n s e 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 Z t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 2014-6-29 4 www.kersemi.com KSMF19N10 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% tr td(on) td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp 2014-6-29 VDS (t) VDD DUT 10V ID (t) tp 5 Time www.kersemi.com KSMF19N10 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 2014-6-29 6 www.kersemi.com KSMF19N10 Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 2014-6-29 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 7 www.kersemi.com