KSMF19N10

KSMF19N10
100V N-Channel MOSFET
TO-220F
Features
•
•
•
•
•
•
•
13.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
Low gate charge ( typical 19 nC)
Low Crss ( typical 32 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Symbol
VDSS
ID
D
!
"
G!
! "
"
"
!
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
KSMF19N10
100
Units
V
13.6
A
- Continuous (TC = 100°C)
9.6
A
54.4
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
220
mJ
IAR
Avalanche Current
(Note 1)
13.6
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
3.8
6.0
38
0.25
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
2014-6-29
1
Typ
--
Max
3.95
Units
°C/W
--
62.5
°C/W
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KSMF19N10
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
100
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.1
VDS = 100 V, VGS = 0 V
--
--
1
µA
VDS = 80 V, TC = 150°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.078
0.1
Ω
--
10
--
S
pF
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.8 A
gFS
Forward Transconductance
VDS = 40 V, ID = 6.8 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
600
780
--
165
215
pF
--
32
40
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 19 A,
RG = 25 Ω
(Note 4, 5)
VDS = 80 V, ID = 19 A,
VGS = 10 V
(Note 4, 5)
--
7.5
25
ns
--
150
310
ns
--
20
50
ns
--
65
140
ns
--
19
25
nC
--
3.9
--
nC
--
9.0
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
13.6
A
ISM
--
--
54.4
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 13.6 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
78
--
ns
Qrr
Reverse Recovery Charge
--
200
--
nC
VGS = 0 V, IS = 19 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.8mH, IAS = 13.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2014-6-29
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KSMF19N10
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
1
10
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
175℃
0
25℃
10
-55℃
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
IDR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
0.30
0.24
VGS = 10V
0.18
VGS = 20V
0.12
0.06
1
10
0
10
175℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
※ Note : TJ = 25℃
-1
0.00
0
20
40
60
10
80
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
VGS, Gate-Source Voltage [V]
1200
Capacitance [pF]
0.2
ID , Drain Current [A]
Ciss
900
Coss
600
※ Notes :
Crss
1. VGS = 0 V
2. f = 1 MHz
300
VDS = 50V
VDS = 80V
8
6
4
2
※ Note : ID = 19A
0
-1
10
0
0
10
0
1
10
Figure 5. Capacitance Characteristics
2014-6-29
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8
12
16
20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
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KSMF19N10
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 9.5 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
15
Operation in This Area
is Limited by R DS(on)
2
10
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
12
100 µs
10 ms
1
10
100 ms
DC
0
10
※ Notes :
9
6
3
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
150
175
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C ( t ) = 3 . 9 5 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
0 .0 5
10
-1
0 .0 2
PDM
0 .0 1
θ JC
( t) , T h e r m a l R e s p o n s e
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
Z
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
2014-6-29
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KSMF19N10
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
2014-6-29
VDS (t)
VDD
DUT
10V
ID (t)
tp
5
Time
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KSMF19N10
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
2014-6-29
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KSMF19N10
Package Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
2014-6-29
2.76 ±0.20
4.70 ±0.20
0.35 ±0.10
7
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