KSMD5P10 / KSMU5P10

KSMD5P10 / KSMU5P10
100V P-Channel MOSFET
TO-252
Features
•
•
•
•
•
•
•
TO-251
-3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V
Low gate charge ( typical 6.3 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS Compliant
General Description
D
These P-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Symbol
VDSS
ID
G
S
TC = 25°C unless otherwise noted
KSMD5P10 / KSMU5P10
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
-100
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
- Pulsed
(Note 1)
Units
V
-3.6
A
-2.28
A
-14.4
A
± 30
V
mJ
EAS
Single Pulsed Avalanche Energy
(Note 2)
55
IAR
Avalanche Current
(Note 1)
-3.6
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
2.5
-6.0
2.5
mJ
V/ns
W
25
0.2
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
5.0
Units
°C/W
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2014-7-12
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KSMD5P10 / KSMU5P10
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
-100
--
--
V
--
-0.1
--
V/°C
VDS = -100 V, VGS = 0 V
--
--
-1
µA
VDS = -80 V, TC = 125°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -1.8 A
--
0.82
1.05
Ω
gFS
Forward Transconductance
VDS = -40 V, ID = -1.8 A
--
2.3
--
S
--
190
250
pF
--
70
90
pF
--
18
25
pF
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -50 V, ID = -4.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = -80 V, ID = -4.5 A,
VGS = -10 V
(Note 4, 5)
--
9
30
--
70
150
ns
--
12
35
ns
--
30
70
ns
--
6.3
8.2
nC
--
1.7
--
nC
--
3.0
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-3.6
A
ISM
--
--
-14.4
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -3.6 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -4.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
85
--
ns
--
0.27
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.4mH, IAS = -3.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2014-7-12
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KSMD5P10 / KSMU5P10
Typical Characteristics
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
1
10
-I D , Drain Current [A]
0
10
-I D, Drain Current [A]
1
10
Top :
-1
10
※ Note :
1. 250μ s Pulse Test
2. TC = 25℃
25℃
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
-55℃
-2
10
150℃
0
10
-1
-1
0
10
10
1
10
10
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
1
VGS = - 10V
2.0
-I DR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
10
VGS = - 20V
1.5
1.0
0.5
※ Note : TJ = 25℃
3
6
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
9
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
450
Capacitance [pF]
25℃
-1
0
500
400
Coss
350
Ciss
300
200
Crss
150
100
50
0
-1
10
0
10
VDS = -20V
10
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
250
10
VDS = -50V
VDS = -80V
8
6
4
2
※ Note : ID = -4.5 A
0
1
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
2014-7-12
150℃
-V GS , Gate-Source Voltage [V]
0.0
0
10
Figure 6. Gate Charge Characteristics
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KSMD5P10 / KSMU5P10
Typical Characteristics
1.2
(Continued)
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -1.8 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
4
Operation in This Area
is Limited by R DS(on)
-I D, Drain Current [A]
-I D, Drain Current [A]
3
100 µs
1
10
1 ms
10 ms
DC
0
10
※ Notes :
2
1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
※ N o te s :
1 . Z θ J C ( t ) = 5 . 0 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T JM - T C = P D M * Z θ JC(t)
0 .2
0
0 .1
0 .0 5
10
0 .0 2
0 .0 1
-1
10
PDM
t1
s in g le p u ls e
Z
θ
75
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
2014-7-12
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KSMD5P10 / KSMU5P10
Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
td(on)
VDD
VGS
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
tp
ID
RG
VDD
DUT
-10V
VDS (t)
ID (t)
IAS
BVDSS
tp
2014-7-12
VDD
Time
5
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KSMD5P10 / KSMU5P10
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
2014-7-12
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KSMD5P10 / KSMU5P10
Package Dimensions
D - PAK
2014-7-12
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KSMD5P10 / KSMU5P10
Package Dimensions
I - PAK
2014-7-12
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