KSMD2P40 / KSMU2P40 400V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.56A, -400V, RDS(on) = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description S These P-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology. Absolute Maximum Ratings Symbol VDSS ID ! ▶ ▲ ● ! D TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current KSMD2P40 / KSMU2P40 -400 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD - Pulsed (Note 1) TL Units V -1.56 A -0.98 A -6.24 A ± 30 V (Note 2) 120 mJ Avalanche Current (Note 1) -1.56 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 3.8 -4.5 2.5 mJ V/ns W 38 0.3 -55 to +150 W W/°C °C 300 °C (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG ● ● G! - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 3.29 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) 2014-7-16 1 www.kersemi.com KSMD2P40 / KSMU2P40 Elerical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -400 -- -- V -- - -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -400 V, VGS = 0 V -- -- -1 µA VDS = -320 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -0.78 A -- 5.0 6.5 Ω gFS Forward Transconductance VDS = -50 V, ID = -0.78 A -- 1.26 -- S -- 270 350 pF -- 45 60 pF -- 6.5 8.5 pF -- 9 30 ns -- 33 75 ns -- 22 55 ns -- 25 60 ns -- 10 13 nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -200 V, ID = -2.0 A, RG = 25 Ω (Note 4, 5) VDS = -320 V, ID = -2.0 A, VGS = -10 V (Note 4, 5) -- 2.1 -- nC -- 5.5 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -1.56 ISM -- -- -6.24 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -1.56 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.0 A, dIF / dt = 100 A/µs (Note 4) -- 250 -- ns -- 0.85 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 86mH, IAS = -1.56A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2014-7-16 2 www.kersemi.com KSMD2P40 / KSMU2P40 Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 0 -I D, Drain Current [A] 10 -I D , Drain Current [A] Top : -1 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 150℃ 25℃ ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test -55℃ -2 10 0 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 12 VGS = - 10V VGS = - 20V 8 6 ※ Note : TJ = 25℃ 0 10 150℃ 0 1 2 3 4 5 10 6 0.0 0.5 -ID , Drain Current [A] 1.0 1.5 2.0 2.5 3.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 Ciss 300 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 200 Crss 100 0 -1 10 0 10 VDS = -80V 10 -V GS , Gate-Source Voltage [V] 500 Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 4 VDS = -200V 8 VDS = -320V 6 4 2 ※ Note : ID = -2.0 A 0 1 10 0 -VDS, Drain-Source Voltage [V] 2 4 6 8 10 12 QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics 2014-7-16 25℃ Figure 6. Gate Charge Characteristics 3 www.kersemi.com KSMD2P40 / KSMU2P40 Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 Operation in This Area is Limited by R DS(on) 1 10 1.5 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 10 ms 0 10 DC -1 10 ※ Notes : o 1. TC = 25 C 1.2 0.9 0.6 0.3 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C( t) = 3 .2 9 ℃ /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θ J C( t) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 t1 s in g le p u ls e Z θ JC 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] 10 -5 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 2014-7-16 4 www.kersemi.com KSMD2P40 / KSMU2P40 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V VDS (t) ID (t) IAS BVDSS tp 2014-7-16 VDD Time 5 www.kersemi.com KSMD2P40 / KSMU2P40 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current I SD ( DUT ) IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt 2014-7-16 6 www.kersemi.com KSMD2P40 / KSMU2P40 Package Dimensions DPAK 0.70 ±0.20 6.60 ±0.20 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (1.00) 2.30 ±0.20 (0.90) 6.10 ±0.20 0.50 ±0.10 (0.70) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 2.30 ±0.10 9.50 ±0.30 5.34 ±0.30 0.76 ±0.10 2014-7-16 7 www.kersemi.com KSMD2P40 / KSMU2P40 Package Dimensions (Continued) IPAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.76 ±0.10 2.30TYP [2.30±0.20] 2014-7-16 0.50 ±0.10 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 (0.50) 9.30 ±0.30 MAX0.96 (4.34) 1.80 ±0.20 0.80 ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 8 0.50 ±0.10 www.kersemi.com