DSEI 30-12A Fast RecoveryEpitaxial Diode (FRED) VRSM DSEI 30 IFAVM = 26 A 1200 VRRM = 1200 V = 40 ns trr Features ● ● ● ● ● ● ● V International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meet UL 94V-0 ● ● ● ● ● ● ● C A V C 1200 DSEI 30-12A A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 70 26 375 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 210 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 185 195 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 180 A 2s A 2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 170 160 A 2s A 2s -40...+150 150 -40...+150 °C °C °C 138 W Applications Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders TO-247 AD Type Symbol I 2t ● VRRM TVJ TVJM Tstg Ptot TC = 25°C Md Mounting torque with screw M3 Mounting torque with screw M3.5 Maximum Ratings 0.45/4 0.55/5 Weight 6 Nm/lb.in. Nm/lb.in. g Symbol Test Conditions Characteristic Values typ. max. IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 750 250 7 µA µA mA VF IF = 30 A; TVJ = 150°C TVJ = 25°C 2.2 2.55 V V VT0 rT For power-loss calculations only TVJ = TVJM 1.65 18.2 V mΩ 0.9 35 K/W K/W K/W Advantages ● ● ● ● ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling RthJC RthCK RthJA 2014-8-8 0.1 trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C 40 60 ns IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs L ≤ 0.05 µH; TVJ = 100°C 16 18 A 1 www.kersemi.com DSEI 30-12A 70 A 60 50 6 T =100°C µC VVJ= 540V R 5 50 Qr TVJ=25°C TVJ=100°C TVJ=150°C 40 30 3 TVJ=100°C VR= 540V 40 max. IF=30A IF=60A IF=30A IF=15A IRM IF=30A IF=60A IF=30A IF=15A 4 IF A 30 20 2 20 typ. max. 1 10 0 10 typ. 0 0 0 1 2 3 V 4 1 10 100 A/µs 1000 VF 0 Fig. 1 Forward current versus voltage drop. Fig. 3 Peak reverse current versus -diF/dt. 1.0 TVJ=100°C VR=540V IRM trr 0.8 0.6 1200 ns V 1000 50 0.8 1.0 D1 60 µs 1.2 VFR IF=30A IF=60A IF=30A IF=15A max. 0.6 40 800 30 600 20 400 VFR tfr 0.4 QR 0.4 tfr 0.2 10 typ. 0.2 0.0 0.0 0 40 80 120 °C 160 TVJ=125°C IF=30A 0 0 200 TJ 400 A/µs 600 0 Dimensions Fig. 6 Peak forward voltage versus diF/dt. Dim. K/W 0.8 ZthJC 0.6 0.4 0.2 0.01 0.1 1 s 10 0 diF/dt Fig. 5 Recovery time versus -diF/dt. 1.0 200 400 A/µs 600 200 -diF/dt Fig. 4 Dynamic parameters versus junction temperature. 0.0 0.001 400 A/µs 600 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 1.4 Kf 200 -diF/dt Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 2.2 2.54 0.087 0.102 t Fig. 7 Transient thermal impedance junction to case. 2014-8-8 2 www.kersemi.com