Fast Recovery Epitaxial Diode (FRED) DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM IFSM TVJ = 45°C; Maximum Ratings 25 12 150 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 75 80 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 65 70 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 28 27 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 21 20 A2s A2s -40...+150 150 -40...+150 °C °C °C 78 W Features ● ● ● ● ● I2t TVJ TVJM Tstg ● ● Applications ● ● ● ● Ptot TC = 25°C Md Mounting torque 0.4...0.6 Weight 2 Nm ● g ● ● Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C Characteristic Values typ. max. VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 250 150 4 mA mA mA ● IF = 12 A; TVJ = 150°C TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM RthJC RthCK RthJA 2.1 2.7 V V 1.67 33.6 V mW 1.6 60 K/W K/W K/W 0.5 trr IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C 50 60 ns IRM VR = 540 V; IF = 12 A; -diF/dt = 100 A/ms L £ 0.05 mH; TVJ = 100°C 6.5 7.2 A ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● VF International standard package JEDEC TO-220 AC Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 ● ● ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling 033 Symbol 1-2 DSEI 12, 1000 V Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Dim. Millimeter Min. Max. Min. Inches Max. A B 12.70 14.73 14.23 16.51 0.500 0.580 0.560 0.650 C D 9.66 10.66 3.54 4.08 0.380 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.42 0.230 0.420 0.100 0.135 G H 1.15 - 1.77 6.35 0.045 0.070 0.250 J K 0.64 4.83 0.89 5.33 0.025 0.035 0.190 0.210 L M 3.56 0.38 4.82 0.56 0.140 0.190 0.015 0.022 N Q 2.04 0.64 2.49 1.39 0.080 0.115 0.025 0.055 Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 2-2