Fast Recovery Epitaxial Diode (FRED) DSEI 20 VRSM A V VRRM Type C IFAVM = 17 A VRRM = 1200 V trr = 40 ns TO-220 AC C V A 1200 1200 DSEI 20-12A C A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 70 17 220 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 130 140 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 110 120 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 85 80 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 60 60 A2s A2s -40...+150 150 -40...+150 °C °C °C 78 W Features ● ● ● ● ● I2t TVJ = 45°C TVJ TVJM Tstg ● ● Applications ● ● ● ● Ptot TC = 25°C Md Mounting torque 0.4...0.6 Weight 2 Nm ● g ● ● ● Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 750 250 7 mA mA mA VF IF = 12 A; TVJ = 150°C TVJ = 25°C 1.87 2.15 V V VT0 rT For power-loss calculations only TVJ = TVJM 1.65 18.2 V mW 1.6 60 K/W K/W 60 ns International standard package Glass passivated chips Very short recovery time Extremely low losses at high switching frequencies Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Characteristic Values typ. max. Advantages ● ● ● trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C 40 IRM VR = 540 V; IF = 20 A; -diF/dt = 100 A/ms L £ 0.05 mH; TVJ = 100°C 7 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling A 033 RthJC RthJA © 2000 IXYS All rights reserved ● 1-2 DSEI 20, 1200V 50 6 70 A 60 TVJ=100°C VR= 540V µC 5 TVJ= 25°C TVJ=100°C TVJ=150°C 30 Qr 3 max. IF=30A IF=60A IF=30A IF=15A IRM IF=30A IF=60A IF=30A IF=15A 4 40 TVJ=100°C VR= 540V 40 50 IF A 30 20 2 20 typ. max. 10 1 10 typ. 0 0 0 1 VF 2 3 V 1 4 10 0 100 A/ms 1000 0 -diF/dt Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. 1.0 µs 0.9 1.4 1.2 Fig. 3 Peak reverse current versus -diF/dt. TVJ=100°C VR=540V 60 1200 V 50 1000 ns VFR 0.8 1.0 IRM Kf trr 0.7 0.8 0.6 0.6 0.5 QR max. IF=30A IF=60A IF=30A IF=15A VFR 0.4 0.4 40 800 30 600 tfr 10 typ. 0.2 0.0 0.1 0 40 TVJ 80 120 °C 160 Fig. 4 Dynamic parameters versus junction temperature. tfr 400 20 0.3 0.2 400 A/ms 600 200 -diF/dt 0 200 -diF/dt 400 A/ms 600 200 TVJ=125°C IF=30A 0 0 0 400 A/ms 600 200 -diF/dt Fig. 5 Recovery time versus -diF/dt. Dimensions Fig. 6 Peak forward voltage versus diF/dt. Dim. Millimeter Min. Max. Min. Inches Max. A B 12.70 14.73 14.23 16.51 0.500 0.580 0.560 0.650 C D 9.66 10.66 3.54 4.08 0.380 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.42 0.230 0.420 0.100 0.135 G H 1.15 - 1.77 6.35 0.045 0.070 0.250 J K 0.64 4.83 0.89 5.33 0.025 0.035 0.190 0.210 L M 3.56 0.38 4.82 0.56 0.140 0.190 0.015 0.022 N Q 2.04 0.64 2.49 1.39 0.080 0.115 0.025 0.055 Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 2-2