R MCL4148 SMALL SIGNAL SWITCHING DIODE S E M I C O N D U C T O R FEATURES MicroMelf Silicon epitaxial planar diode Fast switching diode 500mW power dissipation This diode is also available in other case styles including: the DO-35 case with the type designation 1N4148, the MiniMelf case with the type designation LL4148, the SOD-123 case with the type designation 1N4148W, the SOD-323 case with the type designation 1N4148WS, the SOD-523 case with the type designation 1N4148WT. 0.026(0.48) 0.016(0.28) 0.051(1.30) 0.047(1.20) 0.079(2.0) 0.071(1.8) MECHANICAL DATA Case: MicroMELF glass case Dimensions in inches and (millimeters) Weight: Approx. 0.03gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Value Units VR VRM 75 100 Volts Volts IAV 150 mA IFSM 500 500 mA 175 -65 to +175 C C Symbol DC Blocking Voltage Non-Repetitive Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25°C and f 50Hz Non-Repetitive Peack Forward Surge Current @t=1.0s Power dissipation at TA=25°C Junction temperature Storage temperature range Ptot TJ TSTG mW ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Forward voltage Leakage current Units IR IR IR 1 25 5 50 Volts nA CJ 4 nA pF Vfr 2.5 Volts VF at VR=20V at VR=75V at VR=20V , TJ=150°C Junction capacitance at VR=VF=0V Voltage rise when switching on tested with 50mA pulse tP=0.1ms, Rise time<30ms, fP=5 to 100kHz Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100W Thermal resistance junction to ambient Rectification efficiency at f=100MHz, VRF=2V JINAN JINGHENG ELECTRONICS CO., LTD. Min. Typ. Max at IF=50mA trr R JA nA 4 ns 500 K/W 0.45 11-8 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES MCL4148 FIG 2: DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG 1-FORWARD CHARACTERISTICS mA W 10 3 10 4 TJ=25 C f=1KHz 10 2 IF 10 3 TJ=100 C TJ=25 C rf 10 10 2 1 10 -1 10 -2 1 10 0 1 2V 10 -2 10 -1 1 VF 10 2 10 mA IF FIG 3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE mW 1000 900 1.5 TJ=25 C f=1MHz 800 700 Ptot Cj(VR) Cj(0V) 600 500 1.3 1.1 400 300 0.9 200 100 0.7 0 0 100 200 C 0 TA JINAN JINGHENG ELECTRONICS CO., LTD. 2 4 6 8 10V VR 11-9 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES MCL4148 FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG 6: LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 5 2 10 3 D.U.T. 60W 2nF VRF=2V 5KW 5 VO IR 2 10 2 5 2 10 5 VR=20V 2 1 0 100 200°C Tj FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 I V=tp/T T=1/fp IFRM tp 10 IFRM V=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp JINAN JINGHENG ELECTRONICS CO., LTD. 11-10 HTTP://WWW.JINGHENGGROUP.COM