Preliminary Datasheet RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) 2 Diode 3 IGBT 1. NC 2. Cathode 3. Anode, Collector 4. Emitter 5. Gate 5 12 34 5 4 Absolute Maximum Ratings IGBT Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature (Tc = 25°C) Symbol VCES VGES IC Note1 IC Note1 IC(peak) Note3 PC Note2 Ratings 600 ±30 20 10 100 48 Unit V V A A A W j-c Tj Tstg 2.3 150 –55 to +150 °C/W °C °C Notes: 1. Limited by Tj max. 2. Value at Tc = 25°C 3. Pulse width limited by maximum safe operating area. R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Page 1 of 8 RJQ6008DPM Preliminary Diode (Tc = 25°C) Item Maximum reverse voltage Average rectified forward current Peak surge forward current PW = 10 ms PW = 1 ms Junction to case thermal impedance Junction temperature Storage temperature Symbol VRM Io IFSM Note4 IFSM Note5 j-cd Tj Tstg Ratings 600 20 100 190 3.0 150 –55 to +150 Unit V A A A °C/W C C Notes: 4. 50Hz sine half wave, Non-repetitive 1 cycle value, Tj = 25C. 5. PW = 1ms sine half wave, Non-repetitive peak value, Tj = 25C. Electrical Characteristics IGBT (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Symbol ICES IGES VGE(off) Min — — 3.0 Typ — — — Max 10 ±1 5.5 Unit A A V Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) VCE(sat) — — 2.65 3.2 3.5 — V V IC = 25 A, VGE = 15 V Note6 IC = 50 A, VGE = 15 V Note6 Input capacitance Output capacitance Reveres transfer capacitance Switching time Cies Coes Cres td(on) tr td(off) tf — — — — — — — 1800 200 16 48 68 95 55 — — — — — — — pF pF pF ns ns ns ns VCE = 25 V VGE = 0 f = 1 MHz Symbol VF IR trr Qrr Irr Min Typ 1.2 100 0.29 5.9 Max 1.8 10 Unit V A ns C A IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Rg = 5 Notes: 6. Pulse test Diode (Tj = 25°C) Item Forward voltage Reverse current Reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Test conditions IF = 20 A VR = 600 V IF = 20 A di/dt = –100 A/s Page 2 of 8 RJQ6008DPM Preliminary Main Characteristics IGBT Maximum Safe Operation Area Typical Output Characteristics 100 100 Collector Current IC (A) PW = 10 μs 10 1 0.1 0.01 Ta = 25°C 1 shot pulse 0.001 0.1 1 10 100 60 8V 7.6 V 13 V 15 V 7.2 V 40 6.8 V 20 VGE = 6.4 V 0 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) VCE = 10 V Pulse Test 80 60 Ta = 75°C 40 25°C –25°C 20 0 2 4 6 8 10 12 8 Ta = 25°C Pulse Test 6 4 IC = 50 A 2 25 A 4 8 7 6 VGE = 15 V Pulse Test IC = 100 A 5 4 50 A 3 25 A 2 20 A 10 A 1 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 16 12 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 20 A 10 A 0 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 8.4 V 9V 10 V Collector to Emitter Voltage VCE (V) 100 Collector Current IC (A) Ta = 25°C Pulse Test 80 0 1000 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 10 8 6 IC = 10 mA 4 1 mA 2 VCE = 10 V Pulse Test 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Page 3 of 8 RJQ6008DPM Preliminary Typical Capacitance vs. Collector to Emitter Voltage 10000 Capacitance C (pF) Cies 1000 Coes 100 Cres 10 VGE = 0 V f = 1 MHz Ta = 25°C 1 0 50 100 150 200 250 800 600 12 VCC = 480 V 300 V 100 V VCE 400 8 200 0 4 VCC = 480 V 300 V 100 V 0 20 40 60 80 0 100 Gate Charge Qg (nc) Collector to Emitter Voltage VCE (V) Reverse Recovery Time vs. di/dt (Typical) Forward Current vs. Forward Voltage (Typical) 200 Reverse Recovery Time trr (ns) 100 Diode Forward Current IF (A) 16 VGE IC = 50 A Ta = 25°C Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 80 60 40 VGE = 0 V Ta = 25°C Pulse Test 20 0 IF = 30 A Ta = 25°C 160 120 80 40 0 0 1 2 4 3 C-E Diode Forward Voltage VCEF (V) 0 40 80 120 160 200 di/dt (A/μs) Capacitance vs. Reverse Voltage (Typical) 1000 Capaitace Cj (pF) f = 1 MHz Tc = 25°C 100 10 1 0.1 1 10 100 1000 Reverse Voltage VR (V) R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Page 4 of 8 RJQ6008DPM Preliminary Switching Characteristics (Typical) (2) Switching Characteristics (Typical) (1) 10000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C tr includes the diode recovery 100 td(off) tf td(on) tr 10 1000 100 Eoff Eon 10 Eon includes the diode recovery 1 1 10 1 100 100 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) 10000 Swithing Energy Losses E (μJ) VCC = 300 V, VGE = 15 V IC = 50 A, Tj = 25°C td(off) tr 100 tf td(on) tr includes the diode recovery 10 1 10 Eoff 1000 Eon VCC = 300 V, VGE = 15 V IC = 50 A, Tj = 25°C Eon includes the diode recovery 100 100 1 Gate Resistance Rg (Ω) (Inductive load) 100 Switching Characteristics (Typical) (6) 1000 10000 Swithing Energy Losses E (μJ) VCC = 300 V, VGE = 15 V IC = 50 A, Rg = 5 Ω tr includes the diode recovery tr 100 tf td(on) td(off) 10 25 10 Gate Resistance Rg (Ω) (Inductive load) Switching Characteristics (Typical) (5) Switching Times t (ns) 10 Collector Current IC (A) (Inductive load) 1000 Switching Times t (ns) VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 VCC = 300 V, VGE = 15 V IC = 50 A, Rg = 5 Ω Eon includes the diode recovery Eoff 1000 Eon 100 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 5 of 8 RJQ6008DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2.3 °C/W, Tc = 25°C 0.2 0.1 0.1 0.05 PDM 0.02 D= 0.01 pulse hot PW T 1s 0.01 100 μ PW T 1m 10 m 100 m Pulse Width 1 100 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 3°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 0.01 1 shot pulse 0.01 100 μ 1m PW T PW T 10 m 100 m Pulse Width R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 D= 1 10 100 PW (s) Page 6 of 8 RJQ6008DPM Preliminary Switching Time Test Circuit Waveform 90% Diode clamp 10% VGE L 90% 10% 1% 10% IC D.U.T 90% td(on) VCC tr td(off) tf ttail ton Rg toff VCE 10% Diode Reverse Recovery Time Test Circuit Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 0.5 Irr 0.9 Irr Page 7 of 8 RJQ6008DPM Preliminary Package Dimensions JEITA Package Code SC-93 RENESAS Code PRSS0005ZB-A Previous Code TO-3PFM-5 15.6 ± 0.3 Unit: mm 5.5 ± 0.3 19.9 ± 0.3 +0.4 −0.2 2.0 ± 0.3 5.0 ± 0.3 φ3.2 MASS[Typ.] 5.3g 5.0 ± 0.3 Package Name TO-3PFM-5 2.25 ± 0.3 19.7 ± 0.5 3.2 ± 0.3 1.40 0.86 0.66 +0.2 −0.1 +0.2 0.9 −0.1 2.725 2.725 Ordering Information Orderable Part Number RJQ6008DPM-00#T0 R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Quantity 360 pcs Shipping Container Box (tube) Page 8 of 8 Notice 1. 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