Kingtronics® Kt® MMBT8050

MMBT8050
NPN Silicon Epitaxial Planar
Transistors
For switching and amplifier applications
As complementary types the PNP transistors
1.Base 2.Emitter
MMBT8550 is recommended.
3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL
VALUE
UNIT
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
25
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Power Dissipation
Ptot
350
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Ts
- 55 to + 150
℃
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 1 V, IC = 100 mA
MMBT8050D
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 35 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
Website: www.kingtronics.com
SYMBOL
MMBT8050C
MIN.
TYP.
100
160
40
hFE
MAX.
250
400
-
-
UNIT
-
ICBO
-
-
100
nA
V(BR)CBO
40
-
-
V
V(BR)CEO
25
-
-
V
V(BR)EBO
6
-
-
V
VCE(sat)
-
-
0.5
V
VBE(sat)
-
-
1.2
V
fT
-
100
-
MHz
Email: [email protected]
Tel: (852) 8106 7033
Fax: (852) 8106 7099
1
MMBT8050
NPN Silicon Epitaxial Planar
Transistors
RATINGS AND CHARACTERISTIC CURVES MMBT8050
Note: Specifications are subject to change without notice.
Website: www.kingtronics.com
Email: [email protected]
Tel: (852) 8106 7033
Fax: (852) 8106 7099
2