PNP Silicon Epitaxial Planar Transistors MMBT8550

MMBT8550
PNP Silicon Epitaxial Planar
Transistors
For switching and amplifier applications
As complementary types the NPN transistors
MMBT8050 is recommended.
1.Base 2.Emitter
3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL
VALUE
UNIT
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
25
V
Emitter Base Voltage
-VEBO
6
V
Collector Current
-IC
600
mA
Power Dissipation
Ptot
350
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Ts
- 55 to + 150
℃
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 500 mA
Collector Base Cutoff Current
at -VCB = 35 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA
Website: www.kingtronics.com
SYMBOL
MMBT8550C
MMBT8550D
MIN.
TYP.
100
160
40
hFE
-
MAX.
UNIT
250
400
-
-
-ICBO
-
-
100
nA
-V(BR)CBO
40
-
-
V
-V(BR)CEO
25
-
-
V
-V(BR)EBO
6
-
-
V
-VCE(sat)
-
-
0.5
V
-VBE(sat)
-
-
1.2
V
fT
-
100
-
MHz
Email: [email protected]
Tel: (852) 8106 7033
Fax: (852) 8106 7099
1
MMBT8550
PNP Silicon Epitaxial Planar
Transistors
RATINGS AND CHARACTERISTIC CURVES MMBT8550
Note: Specifications are subject to change without notice.
Website: www.kingtronics.com
Email: [email protected]
Tel: (852) 8106 7033
Fax: (852) 8106 7099
2