MOSFET SMD Type Dual N-Channel MOSFET AO6804 (KO6804) ( SOT-23-6 ) Unit: mm +0.1 ● VDS (V) = 20V 6 5 4 1 2 3 +0.2 1.6 -0.1 ● ID =5 A (VGS = 4.5V) ● RDS(ON) ＜ 34mΩ (VGS = 4V) ● RDS(ON) ＜ 37mΩ (VGS = 3.1V) +0.02 0.15 -0.02 +0.01 -0.01 ● RDS(ON) ＜ 42mΩ (VGS = 2.5V) +0.1 1.1 -0.1 +0.2 -0.1 0-0.1 D2 G1 +0.1 0.68 -0.1 D1 0.55 ● RDS(ON) ＜ 32mΩ (VGS = 4.5V) +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 1 S1 2 D1/D2 3 S2 4 G2 5 D1/D2 6 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation ID TA=70℃ PD V 5 4 4 3.2 1.3 0.8 0.8 0.5 Thermal Resistance.Junction- to-Ambient RthJA 95 150 Thermal Resistance.Junction- to-Lead RthJL - 68 Junction Temperature Storage Temperature Range A 25 IDM TA=25℃ Unit TJ 150 Tstg -55 to 150 W ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual N-Channel MOSFET AO6804 (KO6804) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current VGS(th) RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Test Conditions ID=250μA, VGS=0V Min 20 VDS=20V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±12V VDS=VGS , ID=250 uA 0.5 VGS=4V, ID=4.5A 34 VGS=3.1V, ID=4.5A 37 VGS=2.5V, ID=4A 42 25 580 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 5.3 5.8 7.7 td(on) 2.4 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=4.5V, VDS=10V, ID=5A VGS=10V, VDS=10V, RL=2Ω,RG=3Ω IF= 5A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking H4** www.kexin.com.cn Ω nC 1 6.4 ns 38 9.5 IS VSD pF 3.5 Turn-On DelayTime Diode Forward Voltage 725 70 1.6 Qrr S 95 Qgd Body Diode Reverse Recovery Charge mΩ A 7 Gate Drain Charge tf V 43 Qg trr 1.2 VGS=4.5V, ID=5A TJ=125℃ Qgs Body Diode Reverse Recovery Time nA 32 VDS=5V, ID=5A uA ±500 VGS=4.5V, ID=5A VGS=4.5V, VDS=5V Unit V 1 Total Gate Charge Turn-Off Fall Time Max VDS=20V, VGS=0V Gate Source Charge Maximum Body-Diode Continuous Current 2 Typ 18 24 6 nC 1.1 A 1 V MOSFET SMD Type Dual N-Channel MOSFET AO6804 (KO6804) ■ Typical Characterisitics 25 4.5V VDS= 5V 12 2.5V 20 2V 10 15 ID(A) ID (A) 14 3V VGS=1.8V 10 8 125°C 6 25°C 4 5 2 0 -40°C 0 0 1 2 3 4 5 0 0.4 34 30 Normalized On-Resistance RDS(ON) (mΩ) 1.2 1.6 2 1.6 VGS= 2.5V 32 VGS= 3.1V 28 VGS= 4.0V 26 VGS= 4.5V 24 22 0 2 4 6 8 VGS= 4.5V ID= 5A 1.4 1.2 1.0 0.8 0.6 10 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 -25 0 25 IS (A) 40 125°C 30 25°C 125°C 1E-02 1E-03 25°C 1E-04 20 -40°C 1E-05 -40°C 1E-06 10 3 4 5 6 7 100 125 150 175 1E+00 1E-01 2 75 1E+01 ID= 5.0A 1 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 RDS(ON) (mΩ) 0.8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type Dual N-Channel MOSFET AO6804 (KO6804) ■ Typical Characterisitics 1000 5 VDS= 10V ID= 5A 800 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 600 400 1 200 0 0 Coss Crss 0 1 2 3 4 5 6 7 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 1000 10µs 10 RDS(ON) limited Power (W) 1 1ms 10ms 100ms TJ(Max)=150°C TA=25°C DC 1 10 0.1 0.00001 100 . VDS (Volts) ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=118°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 1 10s 0.01 0.1 TJ(Max)=150°C TA=25°C 100 100µs 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4 15 VDS (Volts) Figure 8: Capacitance Characteristics 100 ID (Amps) 10 www.kexin.com.cn 100 1000