MOSFET SMD Type Dual P-Channel MOSFET AO4807 (KO4807) SOP-8 Unit:mm ■ Features ● VDS (V) = -30V 1.50 0.15 0.21 -0.02 +0.04 ● ID = -6 A (VGS = -10V) ● RDS(ON) ＜ 35mΩ (VGS = -10V) ● RDS(ON) ＜ 58mΩ (VGS = -4.5V) D1 G1 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D2 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID -5 -30 IAS, IAR -23 EAS, EAR 26 RthJA RthJL V -6 IDM PD Unit 2 1.3 A mJ W 62.5 90 ℃/W 40 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual P-Channel MOSFET AO4807 (KO4807) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS , ID=-250uA Gate Threshold Voltage ID=-250μA, VGS=0V Min Typ -30 RDS(On) VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VGS=-10V, ID=-6A -1.3 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=-10V, VDS=-5V VDS=-5V, ID=-6A 19 VGS=0V, VDS=-15V, f=1MHz 1.5 5 13.6 16 6.7 8 VGS=-10V, VDS=-15V, ID=-6A VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω tf 5 15 Body Diode Reverse Recovery Charge Qrr IS VSD IS=-1A,VGS=0V ■ Marking Marking 4807 KA**** www.kexin.com.cn nC ns 17 trr IF= -6A, dI/dt= 100A/us Ω 6 Body Diode Reverse Recovery Time Note.The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. 2 2.5 Turn-Off Fall Time Diode Forward Voltage pF 95 VGS=0V, VDS=0V, f=1MHz 8 Maximum Body-Diode Continuous Current S 140 3.2 td(off) mΩ 760 Qgd Turn-Off DelayTime V A Gate Drain Charge tr -2.4 -30 Qgs td(on) nA 58 Gate Source Charge Turn-On DelayTime ±100 45 TJ=125℃ Qg Turn-On Rise Time uA 35 VGS=-4.5V, ID=-5A On State Drain Current Unit V VGS=-10V, ID=-6A Static Drain-Source On-Resistance Max 9.7 nC -3.5 A -1 V MOSFET SMD Type Dual P-Channel MOSFET AO4807 (KO4807) ■ Typical Characterisitics 30 40 -10V 35 -6V -5V -4.5V VDS=-5V 25 30 -ID(A) -ID (A) 20 -4V 25 20 15 -3.5V 15 10 10 5 125°C 5 VGS=-3V 0 0 0 1 2 3 4 1 5 50 2 2.5 3 3.5 4 4.5 5 1.8 Normalized On-Resistance 45 VGS=-4.5V 40 RDS(ON) (mΩ Ω) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 35 30 25 20 VGS=-10V 15 10 VGS=-10V ID=-6A 1.6 1.4 VGS=-4.5V ID=-5A2 1.2 1 0.8 0 5 10 15 0 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 80 ID=-6A 1.0E+01 60 1.0E+00 125°C 40 -IS (A) RDS(ON) (mΩ Ω) 25°C 125°C 25°C 1.0E-01 1.0E-02 1.0E-03 20 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type Dual P-Channel MOSFET AO4807 (KO4807) ■ Typical Characterisitics 1200 10 VDS=-15V ID=-6A 1000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 800 600 400 2 Coss 200 Crss 0 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 14 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10.0 TA=25°C TA=150°C TA=100°C -ID (Amps) -IAR (A) Peak Avalanche Current 100.0 100µs 1.0 1ms 10ms 0.1 TA=125°C 10µs RDS(ON) limited TJ(Max)=150°C TA=25°C DC 10s 0.0 10.0 0.01 1 10 100 1000 . Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 -VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 1000 MOSFET SMD Type Dual P-Channel MOSFET AO4807 (KO4807) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5