Transistors SMD Type NPN Transistors 2SD1784 SOT-89 Unit:mm 1.70 ■ Features 0.1 ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=30V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 30 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage Unit V VEBO 10 Collector Current - Continuous IC 1.5 A Base Current IB 50 mA PC 1 W TJ 150 Tstg -55 to 150 Collector Power Dissipation (Note.1) Junction Temperature Storage Temperature Range ℃ Note.1 :Value on the alumina ceramic board (250mm 2 X0.8t ) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 10 mA，IB= 0 30 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 10 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 10 Emitter cut-off current IEBO VEB= 5V , IC=0 10 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=1mA 1.5 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=1mA 2.2 VCE= 2V, IC=150mA V uA V 4000 DC current gain hFE Turn-on time ton 0.2 Storage time tstg 0.6 tf 0.3 Fall time Unit us ■ Marking Marking XN www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1784 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD1784 ■ Typical Characterisitics www.kexin.com.cn 3