SMD Type Transistors

Transistors
SMD Type
NPN Transistors
2SD2261
SOT-89
Unit:mm
1.70
0.1
■ Features
● Collector Current Capability IC=2.5A
● Collector Emitter Voltage VCEO=60V
C
0.42 0.1
0.46 0.1
B
1.Base
7kΩ
2.Collector
3.Emitter
500Ω
E
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
80
Collector - Emitter Voltage
VCEO
60
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
IC
2.5
Collector Current - Pulse
ICP
5
PC
1.5
TJ
150
Tstg
-55 to 150
Collector Power Dissipation
(Note.1)
Junction Temperature
Storage Temperature Range
Unit
V
A
W
℃
Note.1 : Mounted on ceramic substrate of 250mm2X0.8mm
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO
Ic= 100 μA， IE= 0
80
Typ
Max
Unit
V
Collector- emitter breakdown voltage
VCEO
Ic= 10 mA，RBE= ∞
60
Emitter - base breakdown voltage
VEBO
IE= 100μA， IC= 0
6
Collector-base cut-off current
ICBO
VCB= 60 V , IE= 0
10
uA
mA
IEBO
VEB= 5V , IC=0
2.5
Collector-emitter saturation voltage
VCE(sat)
IC=1 A, IB=2mA
1.5
Base - emitter saturation voltage
VBE(sat)
IC=1 A, IB=2mA
2
hFE
VCE= 2V, IC=1 A
Emitter cut-off current
DC current gain
2000
V
30000
■ Marking
Marking
DR
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Transistors
SMD Type
NPN Transistors
2SD2261
■ Typical Characterisitics
180uA
160uA
1.4
140uA
1.2
1.0
120uA
0.8
0.6
0.4
0.2
0
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE – V
hFE -- IC
9
25
--
25 C
C
7
5
3
5
3
7
2
0.1
3
5
7
2
1.0
Collector Current, IC – A
VBE (sat) -- IC
3
3
1.0
Collector Current, IC – A
。
。
25 C
5
5
7
0.1
2
3
5
7
1.0
Collector Current, IC – A
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2
3
5
1.0
0.8
1.2
1.4
1.6
1.8
2.0
IC / IB=500
75 C
7
25 C
5
3
5
7
0.1
2
3
7
5
2
3
5
ASO
IC
3
ms
1.0
7
5
DC
op
era
3
2
0.1
7
5
1m
10
2
0.01
1.0
Collector Current, IC – A
ICP
s
tio
n
Ta=25 C
Single pulse
Mounted on a ceramic board (250mm2×0.8mm)
3
2
3
0.6
Ta=--25 C
7
5
75 C
0.4
Base-to-Emitter Voltage, VBE – V
VCE (sat) -- IC
10
IC / IB=500
1.0
0.2
2
2
5
Ta=--25 C
7
0
3
。
2
0
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
2
C
。
。
=
Ta
。
DC Current Gain, hFE
75
3
1000
Base-to-Emitter Saturation Voltage, VBE(sat) – V
0.5
10
5
2
1.0
VCE=2V
7
2
1.5
IB=0
0
10000
2
2.0
Ta= 。
75 C
25 。
C
--25 。
C
uA
200
1.6
。
0
25
。
A
IC -- VBE
VCE=2V
。
30
2.5
uA
。
0u
0
40
1.8
Collector Current, IC – A
IC -- VCE
uA
Collector Current, IC – A
2.0
3
5
7 1.0
2
3
5
7 10
2
3
Collector-to-Emitter Voltage, VCE – V
5
7 100
Transistors
SMD Type
NPN Transistors
2SD2261
■ Typical Characterisitics
PC -- Ta
1.6
Collecter Dissipation, PC – W
1.4
M
ou
nt
1.2
ed
1.0
on
ac
er
am
0.8
0.6
ic
bo
ar
d
(2
0.4
50
m
m2
×0
.8
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – 。C
m
m
)
140
160
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