Transistors SMD Type PNP Transistors 2SB792-HF SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Low noise voltage NV 1 ● Complimentary to 2SD814-HF 0.55 ● High collector to emitter voltage VCEO. +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1.1 +0.2 -0.1 Pb−Free Lead Finish 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 Collector Current - Pulse ICP -100 Collector Power Dissipation PC 200 Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -150 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -150 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -100 V , IE=0 -1 Emitter cut-off current IEBO VEB= -4V , IC=0 -1 V -5 Collector-emitter saturation voltage VCE(sat) IC=-30mA, IB=-3mA -1 Base - emitter saturation voltage VBE(sat) IC=-30mA, IB=-3mA -1.2 DC current gain hFE VCE= -5V, IC= -10mA Noise voltage NV VCE = –10V, IC = –1mA, GV =80dB, Rg = 100kΩ , Function = FLAT Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz Transition frequency fT VCE= -10V, IE = 10mA,f=200MHz Unit 130 uA V 450 150 mV 4 pF 200 MHz ■ Classification of hfe Type 2SB792-R-HF 2SB792-S-HF 2SB792-T-HF Range 130-220 185-330 260-450 Marking IR F IS F IT F www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB792-HF ■ Typical Characterisitics PC — Ta IC — VCE –100 160 120 80 40 IB=–10mA –9mA –8mA –7mA –6mA –5mA –80 –70 –60 –3mA –40 –2mA –30 –20 –1mA 20 40 60 0 80 100 120 140 160 0 –2 –80 –60 –40 –10 –3 Ta=75˚C 25˚C –25˚C – 0.1 – 0.03 –1 –3 –10 Collector current IC –30 –100 (mA) IE=0 f=1MHz Ta=25˚C 9 8 7 6 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) www.kexin.com.cn –10 0 –12 0 – 0.4 Ta=75˚C 300 25˚C –25˚C 200 –1.2 –1.6 –2.0 fT — I E 500 400 – 0.8 Base to emitter voltage VBE (V) 250 VCE=–5V 100 VCB=–10V Ta=25˚C 225 200 175 150 125 100 75 50 25 0 –0.1 –0.3 –1 –3 –10 Collector current IC Cob — VCB 10 Forward current transfer ratio hFE –30 – 0.01 – 0.1 – 0.3 –8 600 IC/IB=10 – 0.3 –6 hFE — IC –100 –1 –4 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –25˚C –20 Transition frequency fT (MHz) 0 Ambient temperature Ta (˚C) Collector output capacitance Cob (pF) Ta=75˚C –10 0 2 VCE=–5V 25˚C –100 –4mA –50 –120 Collector current IC (mA) 200 IC — VBE Ta=25˚C –90 Collector current IC (mA) Collector power dissipation PC (mW) 240 –30 (mA) –100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100