Transistors IC SMD Type PNP Transistors 2SA1981SF-HF SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 0.55 High hFE: h FE=100 to 320 ● Complementary pair with 2SC5344SF-HF +0.2 1.6 -0.1 +0.2 2.8 -0.1 Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 Pb−Free Lead Finish 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -500 μA， IE=0 -35 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -30 -5 Typ Max Unit V Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -35 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 nA Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=- 20mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=- 20mA -1.2 DC current gain hFE VCE= -1V, IC= -100mA Output capacitance Cob VCE= -10V,IE=0,f=1MHz 19 pF Transition frequency fT VCE= -5V, IE= -10mA 120 MHz 100 V 320 ■ Classification of hfe(1) Type 2SA1981SF-O-HF 2SA1981SF-Y-HF Range 100-200 160-320 Marking EAO* F EAY* F www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1981SF-HF ■ Typical Characterisitics Fig. 1 Pc-Ta Fig. 2 IC -VBE Fig. 3 IC - VCE Fig. 4 hFE - IC Fig. 5 VCE(SAT) - IC 2 www.kexin.com.cn