Transistors SMD Type PNP Transistors 2SA1369-HF 1.70 Features 0.1 High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 Complementary to 2SC3439-HF 0.46 0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Peak Collector Current ICM -3 A Collector Power Dissipation PC 500 mW Jumction temperature Tj +150 Tstg -55 to +150 Storage temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Typ Max V Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE=∞ -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=- 20mA Base - emitter saturation voltage VBE(sat) IC=-1A, IB=- 20mA Unit -0.25 -0.5 -1.2 V DC current gain hFE VCE= -6V, IC= -500mA Collector Output Capacitance Cob VCE= -10V, IE= 0,f=1MHz 37 pF VCE= -10V, IE= 10mA 90 MHz Transition frequency fT 400 uA 1200 ■ Classification of hfe Type 2SA1369-G-HF 2SA1369-H-HF Range 400-800 600-1200 Marking GG F GH F www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1369-HF ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SA1369-HF ■ Typical Characterisitics www.kexin.com.cn 3