Transistors SMD Type NPN Transistors KTC3875 (KTC3875S) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Low noise 1 0.55 ● High hFE +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 +0.2 1.1 -0.1 ● Complementary to KTA1504 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 150 mA Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 100 V Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1 DC current gain hFE VCE= 6V, IC= 2mA Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz Transition frequency fT VCE= 10V, IC= 1mA 70 nA V 700 1 10 3.5 80 Unit dB pF MHz ■ Classification of hfe Type KTC3875-O KTC3875-Y KTC3875-G KTC3875-L Range 70-140 120-240 200-400 350-700 Marking ALO ALY ALG ALL www.kexin.com.cn 1 Transistors SMD Type NPN Transistors KTC3875 (KTC3875S) ■ Typical Characterisitics Static Characteristic 7uA COLLECTOR CURRENT 2.5 6uA 2.0 5uA 4uA 1.5 3uA 1.0 600 400 Ta=100 C o Ta=25 C 200 2uA 0.5 0.0 IB=1uA 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 1 10 COLLECTOR CURRENT (V) VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 800 0 10 VBEsat —— IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCE= 6V o hFE 8uA 3.0 IC (mA) COMMON EMITTER Ta=25℃ 9uA 3.5 hFE —— IC 800 10uA DC CURRENT GAIN 4.0 Ta=25℃ 600 Ta=100℃ 400 IC 100 (mA) 150 IC β=10 150 100 Ta=100℃ 50 Ta=25℃ 200 0.1 1 10 COLLECTOR CURRENT o Ta=25℃ 1 500 600 700 BASE-EMITTER VOLTAGE 2 www.kexin.com.cn 800 VBE(mV) —— IC (mA) Ta 175 150 125 100 75 50 25 VCE=6V 400 Pc 200 100 150 10 COLLECTOR CURRENT Ta=100 C 10 1 (mA) COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) COLLECTOR CURRENT IC IC—— VBE 150 100 0.1 300 0 0.1 100 150 900 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150