Transistors SMD Type NPN Transistors 2SC3838 SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 ● Small NF. 0.55 ● Small rbb’·Cc and high gain. +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● High transition frequency. 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 20 Collector - Emitter Voltage VCEO 11 Emitter - Base Voltage Unit V VEBO 3 Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB =0 11 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 3 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 3V , IC=0 0.5 V Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=5mA 0.5 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=5mA 1.2 hFE VCE= 10V, IC= 5mA DC current gain rbb’．Cc Collector-base time constant Noise figure NF VCE = 6 V, IC = 2 mA, f=500 MHz, Rg=50Ω Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz Transition frequency fT 82 VCB = 10 V, IC = 10 mA, f=31.8 MHz, VCE= 10V, IC= 10mA,f=500Mhz uA V 240 4 12 3.5 3.2 PS dB 1.5 1.4 Unit pF GHz ■ Classification of hfe Type 2SC3838-P 2SC3838-Q 2SC3838-Y Range 82-180 100-200 120-240 Marking ADP ADQ ADY www.kexin.com.cn 1