JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263 Plastic-Encapsulate MOSFETS IRFB830 MOSFET( N-Channel ) TO-263 1. G FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 2. D 3. S 1 2 3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units ID @TC=25℃ Continuous Drain Current, VGS @ 10 V 4.5 A ID @TC=100℃ Continuous Drain Current, VGS @ 10 V 2.9 A IDM Pulsed Drain Current (note 1) 18 A PD Power Dissipation 2 W Thermal Resistance from Junction to Ambient 62.5 VGS Gate-Souse Voltage ±20 V EAS Single Pulse Avalanche Energy (note2) 280 mJ IAR Avalanche Current (note 1) 4.5 A EAR Repetitive Avalanche Energy (note 1) 7.4 mJ dv/dt Peak Diode Recovery dv/dt (note 3) 3.5 V/ns TJ Junction Temperature 150 ℃ Tstg Storage Temperature RθJA -55~+150 ℃/W ℃ A,Dec,2010 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Drain-source breakdown voltage Symbol V(BR)DSS Test conditions VGS=0V,ID=250µA Min Typ Max 500 2 4 Unit V Gate-threshold voltage V(GS)th VDS=VGS, ID=250µA Gate-body leakage lGSS VDS=0V, VGS=±20V ±100 nA IDSS VDS=500V, VGS=0V 25 µA Drain-source on-resistance (note 4) RDS(on) VGS=10V, ID=2.7A (note 4) 1.5 Ω Forward transconductance (note 4) gfs VDS=50V, ID=2.7A (note 4) Zero gate voltage drain current Diode forward voltage Qg Gate-source charge Qgs Gate-drain charge Qgd Input capacitance (note 5) Ciss Output capacitance (note 5) Coss Reverse transfer capacitance (note 5) Crss Turn-on delay time (note 4,5) td(on) Rise time (note 4,5) tr Turn-off delay time (note 4,5) td(off) Fall time (note 4,5) tr S IS=4.5A, VGS=0V VSD Total gate charge 2.5 1.6 V 38 VDS=400V, VGS=10V,ID=3.1A 5.0 nC 22 VDS=25V, VGS=0V,f=1MHz 610 160 pF 68 VDD=250V,RD=79Ω, ID=3.1A,RG=12Ω 8.2 nS 16 nS 42 nS 16 nS Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 24mH, IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. 3. ISD = 4.5A, di/dt = 300A/µs, VDD = V(BR)DSS, Starting TJ = 25°C. 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle≤ 2%. 5. These parameters have no way to verify. A,Dec,2010