JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ3420 N-Channel Enhancement Mode Field Effect Transistor SOT-23 DESCRIPTION The CJ3420 uses advanced trench technology to provide excellent RDS(on).This device is suitable for use as a uni-directional or bi-directional 1. GATE load switch. 2. SOURCE 3. DRAIN MARKING: R20 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID 6 Pulsed Drain Current IDM 25 Maximum Body-Diode Continuous Current IS 2 Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient V A ℃ B,May,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Gate-source leakage current IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =16V, VGS =0V 1.0 µA 0.7 1.0 V VGS =10V, ID =6.0A 19 24 VGS =4.5V, ID =5.0A 22 27 VGS =2.5V, ID =4.0A 35 42 Gate threshold voltage Drain-source on-state resistance VGS(th) RDS(on) VDS =VGS, ID =250µA 20 0.5 V 74 VGS =1.8V, ID =2.0A Diode forward voltage VSD VGS =0V,IS=1A Forward transconductance gfS VDS =5V, ID =3.8A mΩ 0.75 4 1 V S DYNAMIC PARAMETERS* Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg 630 VDS =10V,VGS =0V,f =1MHz 164 pF 137 VDS =0V,VGS =0V,f =1MHz 1.5 Ω SWITCHING PARAMETERS* Turn-on delay time Rise time Turn-off delay time Fall time td(on) 5.5 tr VGS=5V,VDS=10V, 14 td(off) RL=1.7Ω,RGEN=6Ω 29 tf ns 10.2 *These parameters have no way to verify. B,May,2011 Typical Characteristics CJ3420 Transfer Characteristics Output Characteristics 20 5 VGS=10V 4V 3V 2.5V Ta=25℃ Ta=25℃ Pulsed Pulsed 4 (A) 10 5 ID DRAIN CURRENT ID 2V 3 DRAIN CURRENT (A) 15 2 1 VGS=1.5V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 0 0.0 5 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE RDS(ON) —— ID 70 VGS 2.0 (V) VGS 90 Ta=25℃ Ta=25℃ Pulsed Pulsed 60 (m) (m) VGS=1.8V 60 RDS(ON) 40 ON-RESISTANCE ON-RESISTANCE RDS(ON) 50 VGS=2.5V 30 VGS=4.5V ID=6A 30 20 VGS=10V 10 0 0 2 4 6 DRAIN CURRENT IS —— ID 8 10 (A) 0 2 4 GATE TO SOURCE VOLTAGE 6 VGS 8 (V) VSD 10 Ta=25℃ Pulsed 0.1 SOURCE CURRENT IS (A) 1 0.01 1E-3 1E-4 1E-5 0.0 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 VSD 1.0 (V) B,May,2011