JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel 30-V(D-S) MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S4 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 3.3 Pulsed Drain Current IDM 15 Continuous Source-Drain Diode Current IS 0.9 Maximum Power Dissipation PD 0.35 W RθJA 357 ℃/W Storage Temperature TJ 150 Junction Temperature TSTG -55 ~+150 Thermal Resistance from Junction to Ambient (t≤5s) V A ℃ B,Otc,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 30 VGS(th) VDS =VGS, ID =250µA 1.2 Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea RDS(on) gfs V 2.2 VGS =10V, ID =3.2A 0.049 0.060 VGS =4.5V, ID =2.8A 0.061 0.075 VDS =4.5V, ID =2.5A 2.5 Ω S b Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay Time td(on) Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time tr td(off) tf td(on) tr td(off) tf VDS =15V,VGS =10V,ID =3.4A VDS =15V,VGS =4.5V,ID =3.4A 4.5 6.7 2.1 3.2 0.85 nC 0.65 f =1.0MHz 0.8 4.4 8.8 Ω 235 VDS =15V,VGS =0V,f =1MHz pF 45 17 VDD=15V, RL=5.6Ω, ID ≈2.7A, VGEN=4.5V,Rg=1Ω VDD=15V, RL=5.6Ω, ID ≈2.7A, VGEN=10V,Rg=1Ω 12 20 50 75 12 20 22 35 5 10 12 20 10 15 5 10 ns Drain-source body diode characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC=25℃ IS=-2.7A,VGS=0V 0.8 1.4 A 15 A 1.2 V Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. Guaranteed by design, not subject to production testing. B,Otc,2011 Typical Characteristics CJ2304 Transfer Characteristics Output Characteristics 20 5 VGS=10V,9V,8V,7V,6V,5V Ta=25℃ Ta=25℃ Pulsed Pulsed (A) VGS=4V VGS=3V 5 ID 10 3 DRAIN CURRENT DRAIN CURRENT ID (A) 4 15 2 1 VGS=2V 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 150 0 10 VDS 12 0 1 2 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID 3 VGS VGS 500 Ta=25℃ Ta=25℃ Pulsed Pulsed 400 RDS(ON) 90 VGS=4.5V ON-RESISTANCE RDS(ON) (mΩ) (mΩ) 120 ON-RESISTANCE 4 (V) 60 VGS=10V 30 0 0 4 8 12 DRAIN CURRENT IS 10 —— ID 16 20 300 200 ID=2.5A 100 0 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 8 VGS 10 (V) VSD Ta=25℃ 1 SOURCE CURRENT IS (A) Pulsed 0.1 0.01 1E-3 0 200 400 600 SOURCE TO DRAIN VOLTAGE 800 VSD 1000 1200 (mV) B,Otc,2011