JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET (N-Channel) SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability 1. GATE 2. SOURCE 3. DRAIN Marking: 7002 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Value Unit 60 V VGS 20 V Continuous Drain Current ID 0.115 A Power Dissipation PD 0.225 W RθJA 556 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit V(BR)DSS VGS=0 V, ID=250 µA 60 Vth(GS) VDS=VGS, ID=250 µA 1 Gate-body Leakage lGSS VDS=0 V, VGS=±20 V ±80 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA On-state Drain Current ID(ON) VGS=10 V, VDS=7 V Drain-Source On-Resistance RDS(on) Forward Trans conductance gfs Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-source on-voltage VDS(on) Diode Forward Voltage VSD Input Capacitance * Ciss Output Capacitance * Coss Reverse Transfer Capacitance * Crss 2.5 500 V mA VGS=10 V, ID=500mA 7 VGS=5 V, ID=50mA 7 Ω VDS=10 V, ID=200mA 80 VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V 1.2 V IS=115mA, VGS=0 V 0.55 ms 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time * td(on) Turn-off Time * td(off) *These parameters have no way to verify. VDD=25 V, RL=50Ω, ID=500mA,VGEN=10 V RG=25Ω 20 40 ns F,Apr,2014 Typical Characteristics 2N7002 Transfer Characteristics Output Characteristics 1.0 1.0 VGS=10V,9V,8V,7V,6V,5V Ta=25℃ Ta=25℃ Pulsed Pulsed 0.8 ID 0.6 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 0.8 VGS=4V 0.4 0.2 0.0 VGS=2V 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0.4 0.2 VGS=3V 0 0.6 0.0 5 0 2 4 6 8 GATE TO SOURCE VOLTAGE (V) RDS(ON) N —— ID RDS(ON) —— 8 VGS VGS 6 Ta=25℃ Ta=25℃ ( Ω) Pulsed RDS(ON) 6 RDS(ON) ( Ω) Pulsed VGS=5V 4 ON-RESISTANCE ON-RESISTANCE 10 (V) VGS=10V 2 0 0.0 0.2 0.4 0.6 DRAIN CURRENT ID 0.8 1.0 4 ID=500mA ID=50mA 2 0 0 6 GATE TO SOURCE VOLTAGE (A) 12 VGS 18 (V) IS —— VSD 1 Ta=25℃ SOURCE CURRENT IS (A) Pulsed 0.3 0.1 0.03 0.01 0.0 0.4 0.8 SOURCE TO DRAIN VOLTAGE 1.2 1.6 VSD (V) F,Apr,2014 Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° F,Apr,2014