JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×2-6L-U Power Management Transistors- MOSFET CJMNT32 PNP Power Transistor with N-MOSFET DESCRIPTIONS The CJMNT32 is PNP bipolar power transistor with 20V N-MOSFET.This device is suitable for use in charging circuit and other power management. DFNWB2×2-6L-U 1.EMITTER 2.BASE D 3.DRAIN FEATURE z Ultra low collector-to-emitter saturation voltage z High DC current gain z Small package DFNWB2×2-6L-U 4.SOURCE C 5.GATE 6.COLLECTOR APPLICATION z Charging circuit z Other power management in portable equipment C MARKING：32 6 1 E G 5 2 S 4 B 3 D ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit PNP Transistor VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -6 V Collector Current-Continuous(Note1) -1.5 A Collector Current-Continuous(Note2) -0.6 A Collector Current-Pulse(Note3) -4 A VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±5 V Continuous Drain Current (note 1) 0.8 A Collector Current-Continuous(Note2) 0.69 A Collector Current-Pulse(Note3) 1.4 A IC ICM N-MOSFET ID IDM A-3,Jan,2014 Temperature and Thermal Resistance 178.6 ℃/W Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) 260 ℃ RθJA Thermal Resistance from Junction to Ambient (note 2) Tj ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit PNP Transistor Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -32 Collector-emitter breakdown Emitter-base breakdown voltage V V(BR)CEO IC=-10mA,IB=0 -32 V V(BR)EBO IE=-100uA,IC=0 -6 V Collector cut-off current ICBO VCB=-30V,IE=0 Emitter cut-off current IEBO VEB=-5V,IC=0 DC current gain hFE VCE=-2V,IC=-0.5A Collecor-emitter saturation voltage VCE(sat) IC=-0.5A,IB=-50mA -0.35 V Base-emitter saturation voltage VBE(sat) IC=-0.5A,IB=-50mA -1.5 V Base-emitter voltage VBE(on) VCE=-2V,IC=-500mA -1.1 V V(BR)DSS VGS = 0V, ID =250µA IDSS VDS =16V,VGS = 0V 100 -0.1 uA -0.1 uA 300 N-MOSFET STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current IGSS VGS =±5V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance(note 3) RDS(on) 20 V VSD nA ±1 uA 1.1 V VGS =4.5V, ID =0.55A 600 mΩ VGS =2.5V, ID =0.5A 650 mΩ 700 mΩ 1.1 V 0.44 VGS =1.8V, ID =0.35A Diode forward voltage (note 3) 100 IS=0.35A, VGS = 0V 0.5 DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 61 VDS =10V,VGS =0V,f =100KHz 17 pF pF 10 pF SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) tf Total Gate Charge Qg Gate-Source Chage Qgs Gage-Drain Charge Qgd VGEN=4.5V,VDD=10V, ID=500mA,RGEN=6Ω RL=10Ω VDS=10V,VGS=4.5V ID=0.6A 33 ns 102 ns 790 ns 439 ns 1.15 nC 0.15 nC 0.23 nC Notes : 1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper. 2.Surface mounted on FR4 board using the minimum pad size,1oz copper. 3. Pulse test : Pulse width=300μs, duty cycle≤2%. 4. These parameters have no way to verify. A-3,Jan,2014 CJMNT32 Typical Characterisitics PNP transistor Static Characteristic -0.60 COMMON EMITTER Ta=25℃ -0.50 -2.8mA -0.45 IC -2.4mA -0.40 -2mA -0.35 -1.6mA -0.30 -0.25 -1.2mA -0.20 -800uA -0.15 —— IC Ta=100℃ hFE -3.2mA 300 DC CURRENT GAIN (A) -3.6mA -4mA -0.55 COLLECTOR CURRENT hFE 1000 Ta=25℃ 100 30 -0.10 IB=-400uA -0.05 -0.00 -0.0 -0.5 -1.0 -1.5 -2.0 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— -2.5 VCE -3.0 -1 -10 (V) -100 COLLECTOR CURRENT IC VBEsat -2000 IC -1000 (mA) IC —— -300 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCE=-2V 10 -1000 Ta=100℃ -100 Ta=25℃ -30 -10 Ta=25℃ Ta=100℃ -300 -3 β=10 -1 -1 β=10 -100 -3 -10 -100 -30 COLLECTOR CURRENT VBE -1500 IC -300 -1000 -1500 -1 (mA) -3 -30 -10 -100 COLLECTOR CURRENT —— IC Cob/ Cib 100 IC -1000 -1500 -300 (mA) —— VCB/ VEB -1000 (pF) Ta=100℃ 30 Cob C -100 Ta=25℃ CAPACITANCE COLLCETOR CURRENT IC (mA) Cib -300 -30 -10 10 3 f=1MHz IE=0/IC=0 -3 -1 -200 VCE=-2V -400 -600 -800 BASE-EMMITER VOLTAGE fT —— -1200 -0.3 -1 REVERSE VOLTAGE (mV) -10 -3 V -20 (V) IC TRANSITION FREQUENCY fT (MHz) 1000 -1000 VBE Ta=25℃ 1 -0.1 300 100 30 VCE=-10V Ta=25℃ 10 -1 -3 -10 COLLECTOR CURRENT -30 IC (mA) -100 A-3,Jan,2014 Typical Characteristics CJMNT32 N-ch MOS Output Characteristics 5 Transfer Characteristics 500 Ta=25℃ 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 3.5V 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS VGS Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=1.8V 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 3.0 (V) ON-RESISTANCE VGS=2.5V VGS=4.5V 200 400 ID=600mA 300 100 0 100 200 200 400 600 DRAIN CURRENT ID 1 800 IS —— VSD 500 3 4 VGS 5 (V) Threshold Voltage 0.85 0.80 THRESHOLD VOLTAGE VTH IS (mA) (V) 100 SOURCE CURRENT 2 GATE TO SOURCE VOLTAGE (mA) Ta=100℃ 10 Pulsed Ta=25℃ Pulsed 1 0.1 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 VSD (V) 1.2 0.75 ID=250uA 0.70 0.65 0.60 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) A-3,Jan,2014