NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery−powered portable electronics. http://onsemi.com MOSFET V(BR)DSS −6.2 A 44 mW @ −2.5 V Low Vce(sat) PNP (Wall/USB) High Performance Power MOSFET Single Low Vce(sat) Transistor as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin−out Provides Circuit Flexibility Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device VCEO MAX VEBO MAX IC MAX −20 V −7.0 V −2.0 A MARKING DIAGRAM 8 1 1 5531 AYWW G G WDFN8 CASE 506BC Applications • Main Switch and Battery Charging Mux for Portable Electronics • Optimized for Commercial PMUs from Top Suppliers (See Figure 2) Emitter ID MAX 32 mW @ −4.5 V −12 V Features • • • • • • RDS(on) TYP 1 8 5531 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Base PIN ASSIGNMENT Emitter Collector Source 2 7 3 6 4 5 N/C Gate Base 8 NC 7 GATE 6 Drain 5 Drain Collector 10 9 Drain 1 Emitter 2 Emitter 3 Collector 4 Source (Bottom View) (Top View) Figure 1. Simple Schematic ORDERING INFORMATION Device Package Shipping† NUS5531MTR2G WDFN8 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 1 Publication Order Number: NUS5531MT/D NUS5531MT P−Channel Power MOSFET Maximum Ratings (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS −12 V Gate−to−Source Voltage VGS ±8.0 V ID −5.47 A Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C t≤5s Power Dissipation (Note 1) TA = 25°C Steady State t ≤ 10 s Continuous Drain Current (Note 2) −4.0 Steady State TA = 25°C −6.2 PD 1.46 2.1 ID TA = 25°C −4.4 TA = 85°C Power Dissipation (Note 3) TA = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Operating Case Temperature (Note 3) Source Current (Body A −3.2 PD 0.418 W IDM −25 A TJ, TSTG −55 to 150 °C TC −55 to 125 °C IS −2.8 A TL 260 °C Diode)2 Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) W THERMAL RESISTANCE RATINGS Symbol Max Units Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 299 °C/W Junction−to−Ambient – t < 10 s (Note 3) RqJA 81.4 °C/W Junction−to−Ambient – Steady State (Note 1) RqJA 85.5 °C/W Junction−to−Ambient – t < 10 s (Note 1) RqJA 58.7 °C/W Junction−to−Case – t < 10 s (Note 3) yJC 26 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces). 2. Surface−mounted on FR4 board using 0.5 in sq pad size, 1 oz. Cu. 3. Surface−mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu. P−Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min −12.0 Typ Max Unit OFF CHARACTERISTICS V(BR)DSS VGS = 0 V, ID = −250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient Drain−to−Source Breakdown Voltage V(BR)DSS/TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8 V VGS(TH) VGS = VDS, ID = −250 mA VGS = 0 V, VDS = −12 V V −10.1 TJ = 25°C mV/°C −1.0 TJ = 125°C mA −10 ±200 nA −1.1 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) −0.67 2.68 VGS = −4.5 V, ID = −3.0 A gFS −0.45 mV/°C 32 40 VGS = −2.5 V, ID = −3.0 A 44 50 VDS = −16 V, ID = −3.0 A 5.9 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% http://onsemi.com 2 mW S NUS5531MT P−Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE VGS = 0 V, f = 1.0 MHz, VDS = −12 V Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(tot) Threshold Gate Charge QG(th) Gate−to−Source Charge QGS 1.7 Gate−to−Drain Charge QGD 2.5 pF 1329 200 116 VGS = −4.5 V, VDS = −12 V, ID = −3.0 A nC 13 1.1 SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time Rise Time tr Turn−Off Delay Time VGS = −4.5 V, VDD = −12 V, ID = −3.0 A, RG = 3.0 ns 8 17.5 td(off) 80 tf 56.5 Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time Reverse Recovery Charge VGS = 0 V, IS = −1.0 A TJ = 25°C −0.66 TJ = 125°C −0.54 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A −1.2 V ns 70.8 14.3 tb 56.4 QRR 44 nC Single−PNP Transistor Maximum Ratings (TJ = 25°C unless otherwise stated) Symbol Value Units Collector−Emitter Voltage Parameter VCEO −20 V Collector−Base Voltage VCBO −20 V Emitter−Base Voltage VEBO −7.0 V Collector Current, Continuous IC −2.0 A Collector Current, Peak IC −4.0 A TJ, TSTG −55 to 150 °C PD 1.58 W RqJA 61.5 °C/W PD 0.43 W RqJA 293 °C/W Operating Junction and Storage Temperature Power Dissipation, TA = 25°C (Note 5) Thermal Resistance (Note 5) Power Dissipation, TA = 25°C (Note 6) Thermal Resistance (Note 6) 5. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces) 6. Surface−mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu. http://onsemi.com 3 NUS5531MT Single−PNP Transistor Electrical Characteristics (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Units Collector−Emitter Breakdown Voltage VbrCEO IC = −10 mA, IB = 0 −20 V Collector−Base Breakdown Voltage VbrCBO IC = −0.1 mA, IE = 0 −20 V Emitter−Base Breakdown Voltage VbrEBO IE = −0.1 mA, IC = 0 −7.0 V ICES VCES = −15 V DC Current Gain (Note 7) hFE IC = −1.0 A, VCE = −2.0 V 180 − DC Current Gain (Note 7) hFE IC = −2.0 A, VCE = −2.0 V 150 − Collector−Emitter Saturation Voltage VCE(sat) IC = −1.0 A, IB = −0.01 A −0.10 −0.12 V Collector−Emitter Saturation Voltage VCE(sat) IC = −1.0 A, IB = −0.1 A −0.065 −0.09 V Collector−Emitter Saturation Voltage VCE(sat) IC = −2.0 A, IB = −0.2 A −0.13 −0.18 V Base−Emitter Saturation Voltage (Note 7) VBE(sat) IC = −1.0 A, IB = −0.01 A −0.9 V Base−Emitter Turn−On Voltage (Note 7) VBE(on) IC = −1.0 A, IB = −2.0 A −0.9 V Cutoff Frequency (Note 8) fT IC = −100 mA, VCE = −5.0 V f = 100 MHz Input Capacitance (Note 8) Cibo VEB = −0.5 V, f = 1.0 MHz 330 pF Output Capacitance (Note 8) Cobo VCB = −3.0 V, f = 1.0 MHz 100 pF OFF CHARACTERISTICS Collector−Emitter Cutoff Current −0.1 mA ON CHARACTERISTICS 100 MHz 7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% 8. Guaranteed by design but not tested. from Wall/USB 1 8 CHR/USB_ctl from Wall/USB 2 7 N/C 3 6 BAT_FET_N 4 5 R_sns Main Battery Supply Voltage VDD Figure 2. Typical Application Circuit http://onsemi.com 4 NUS5531MT TYPICAL CHARACTERISTICS − MOSFET −1.7 − −8.0 V 5 6 −1.5 V 4 VGS = −1.4 V 3 2 1 TJ = 25°C 0 1 2 3 4 5 1 0.5 1.0 1.5 2.0 Figure 4. Transfer Characteristics 0.04 TJ = 25°C 0.03 TJ = −55°C 1 2 3 4 5 6 −ID, DRAIN CURRENT (A) 0.05 TJ = 25°C VGS = −2.5 V 0.04 VGS = −4.5 V 0.03 0.02 1 2 3 4 5 6 −ID, DRAIN CURRENT (A) Figure 5. On−Resistance vs. Drain Current Figure 6. On−Resistance vs. Drain Current and Gate Voltage 10,000 ID = −3 A VGS = −4.5 V VGS = 0 V TJ = 150°C −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 2 Figure 3. On−Region Characteristics TJ = 100°C 1.4 TJ = 100°C 3 −VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 4.5 V 1.6 TJ = 25°C 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.05 0.02 VDS ≥ −10 V 5 0 6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −1.6 V −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 6 1.2 1,000 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ = 100°C 100 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. On−Resistance Variation with Temperature Figure 8. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 5 12 NUS5531MT VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 2400 Ciss 2000 1600 Ciss 1200 Crss 800 Coss 400 0 −4 −2 0 2 4 6 8 10 12 6 VGS 3 Qgs 2 0 tf tr 10 td(on) 1 10 4 ID = −3 A TJ = 25°C 0 2 4 6 8 10 12 2 0 14 Qg, TOTAL GATE CHARGE (nC) Figure 10. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 1 TJ = −55°C TJ = 150°C 0.1 0.01 100 6 Qgd 1 −IS, SOURCE CURRENT (A) td(off) 100 0 0.2 0.4 0.6 0.8 1.0 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current 100 −ID, DRAIN CURRENT (A) t, TIME (ns) 8 10 VDD = −12 V ID = −3.0 A VGS = −4.5 V 10 QT 4 Figure 9. Capacitance Variation 1 VDS 5 −VGS −VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1,000 12 Single Pulse TC = 25°C 10 Mounted on 2″ sq. FR4 board (0.5″ sq. 2 oz. Cu single sided) with MOSFET die operating. 100 ms 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.1 1 dc 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 6 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2800 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS − MOSFET 100 NUS5531MT TYPICAL CHARACTERISTICS − MOSFET RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 Single Pulse 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 t, TIME (s) Figure 14. FET Thermal Response http://onsemi.com 7 1E+00 1E+01 1E+02 1E+03 NUS5531MT TYPICAL CHARACTERISTICS − BJT 0.35 150°C IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 0.2 25°C 0.15 −55°C 0.1 0.05 0 0.001 0.01 0.1 1.0 0.25 0.2 150°C 0.15 25°C 0.1 0.05 10 0 0.001 0.01 Figure 15. Collector Emitter Saturation Voltage vs. Collector Current 400 300 250 25°C (5.0 V) 25°C (2.0 V) 200 −55°C (5.0 V) 150 −55°C (2.0 V) 100 0.001 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.0 0.9 0.01 0.1 1.0 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.001 10 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. DC Current Gain vs. Collector Current Figure 18. Base Emitter Saturation Voltage vs. Collector Current 1.0 VCE = −2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.1 0.001 IC/IB = 10 1.1 150°C (2.0 V) 450 350 10 1.2 150°C (5.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 500 1.0 Figure 16. Collector Emitter Saturation Voltage vs. Collector Current VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 550 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 600 −55°C IC/IB = 100 0.3 0.01 0.1 1.0 10 0.8 0.7 10 mA IC = 500 mA 100 mA 300 mA 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1.0 10 IB, BASE CURRENT (mA) Figure 19. Base Emitter Turn−On Voltage vs. Collector Current Figure 20. Saturation Region http://onsemi.com 8 100 NUS5531MT TYPICAL CHARACTERISTICS − BJT 170 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 350 Cibo (pF) 325 300 275 250 225 200 175 150 125 0 1.0 2.0 3.0 4.0 5.0 6.0 Cobo (pF) 150 130 110 90 70 50 0 2.0 4.0 6.0 8.0 10 12 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 21. Input Capacitance Figure 22. Output Capacitance http://onsemi.com 9 14 16 NUS5531MT PACKAGE DIMENSIONS WDFN8, 3x3, 0.65P CASE 506BC−01 ISSUE A A D L B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L1 ÉÉÉ ÉÉÉ ÉÉÉ PIN ONE REFERENCE 2X 0.10 C 2X DETAIL A 0.10 C OPTIONAL CONSTRUCTIONS E ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW MOLD CMPD DETAIL B A (A3) DETAIL B DIM A A1 A3 b D D2 D3 E E2 e G2 G3 K L L1 OPTIONAL CONSTRUCTIONS 0.05 C 8X 0.05 C SIDE VIEW NOTE 4 A1 C SEATING PLANE SOLDERING FOOTPRINT* G2 G3 0.10 C A B 2.60 0.10 C A B D2 1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 1.00 1.20 0.95 1.15 3.00 BSC 1.70 1.90 0.65 BSC 0.15 BSC 0.20 BSC 0.20 −−− 0.25 0.45 −−− 0.15 4 8X L DETAIL A 1.30 D3 1.20 E2 ÇÇ ÇÇ ÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇ 1.94 0.10 C A B 8X K e 8 5 e/2 BOTTOM VIEW 8X b 0.10 C A B 0.05 C 1.15 0.55 8X 3.30 ÇÇ ÇÇÇÇÇÇ ÇÇ ÇÇÇÇÇÇ 1 NOTE 3 8X 0.35 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUS5531MT/D