CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features · · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Case material - UL Flammability Rating Classification 94V-0 Terminal Connections: See Diagram Marking: A80 Weight: 0.006 grams (approx.) A80 H K M J CQ1 GQ2 B C D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm SQ2 Q1 Q2 EQ1 BQ1 DQ2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Value Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Maximum Ratings, Q1, MMBT4403 PNP Transistor Element Characteristic Unit @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element Characteristic @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V VGSS ±20 ±40 V ID 115 73 800 mA Gate-Source Voltage Drain Current (Note 1) DS30296 Rev. 2 - 2 Continuous Pulsed Continuous Continuous @ 100°C Pulsed 1 of 4 CTA2P1N Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element NEW PRODUCT @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base- Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS fT 200 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = ¾ -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 ¾ V VGS = 0V, ID = 10mA µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage @ TC = 25°C @ TC = 125°C IDSS ¾ ¾ 1.0 500 IGSS ¾ ¾ ±10 nA VGS(th) 1.0 ¾ 2.0 V VDS = VGS, ID =-250mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage ¾ 3.2 4.4 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 ¾ A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 50 pF Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ 7.0 20 ns Turn-Off Delay Time tD(OFF) ¾ 11 20 ns Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance @ Tj = 25°C @ Tj = 125°C RDS (ON) VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Note: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30296 Rev. 2 - 2 2 of 4 CTA2P1N Notes: (Note 3) Device Packaging Shipping CTA2P1N-7 SOT-363 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. A80 YM Marking Information Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N O P Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 30 20 CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -30 -10 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (MMBT4403) VCE COLLECTOR-EMITTER VOLTAGE (V) NEW PRODUCT Ordering Information 1.6 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA IC = 300mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (MMBT4403) DS30296 Rev. 2 - 2 3 of 4 CTA2P1N 5.5V 5.0V 0.4 0.2 DRAIN-SOURCE ON-RESISTANCE (W) 0.6 Tj = 25°C RDS(ON), NORMALIZED ID, DRAIN-SOURCE CURRENT (A) 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 RDS(ON), NORMALIZED 2.5 2.0 1.5 VGS = 10V, ID = 200mA 1.0 -55 DRAIN-SOURCE ON-RESISTANCE (W) DRAIN-SOURCE ON-RESISTANCE (W) 0.4 0.6 0.8 1.0 6 3.0 RDS(ON), STATIC 0.2 ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs Drain Current (2N7002) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 On-Region Characteristics (2N7002) 5 4 -5 20 45 70 95 120 145 ID = 500mA ID = 50mA 3 2 1 0 -30 Tj, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs Junction Temperature (2N7002) 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage (2N7002) 10 VGS, GATE SOURCE CURRENT (V) NEW PRODUCT 1.0 VDS = 10V 9 8 7 6 TA = +125°C TA = +75°C 5 4 3 TA = -55°C TA = +25°C 2 1 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 7 Typical Transfer Characteristics (2N7002) DS30296 Rev. 2 - 2 4 of 4 CTA2P1N