EMF6 Transistors Power management (dual transistors) EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 !External dimensions (Units : mm) !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 !Equivalent circuits (3) (2) Each lead has same dimensions Abbreviated symbol：F6 (1) Tr1 Tr2 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF6 EMT6 F6 T2R 8000 1/5 EMF6 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO −15 VCEO −12 −6 VEBO −500 IC Collector current −1.0 ICP 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS ±20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg −55~+150 Range of storage temperature Unit V V mA mA mA mA mW °C °C ∗1 ∗1 ∗2 ∗1 PW≤10ms Duty cycle≤50% ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −100 − 260 6.5 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−200mA, IB=−10mA VCE=−2V, IC=−10mA VCE=−2V, IE=10mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz Symbol IGSS V(BR)DSS IDSS VGS(th) Min. − 30 − 0.8 − − 20 − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Unit µA V µA V Ω Ω ms pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500Ω, RGS=10Ω 2/5 EMF6 Transistors 0.2 10 0.4 0.6 0.8 1.0 1.2 1.4 1 10 BASE TO EMITTER VOLTAGE : VBE (V) Ta=125°C 100 Ta=25°C Ta=−40°C 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 10000 IC/IB=20 Pulsed 1000 BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 Grounded emitter propagation characteristics 1000 Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=−40°C 100 1 0 Fig.2 DC current gain vs. collector current Ta=25°C 1000 IC/IB=20 Pulsed Ta=25°C 1000 Ta=−40°C Ta=125°C 100 10 1 10 100 1000 1000 Ta=25°C Pulsed 100 IC/IB=50 IC/IB=20 IC/IB=10 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 1000 TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE C Ta=25° Ta= −40° C °C 1 VCE=2V Pulsed Ta=125°C 100 10 COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Pulsed Ta=12 5 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves Tr1 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C 100 Cib 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/5 EMF6 Transistors 0.15 200m 3V 3.5V 0.1 2.5V 0.05 2V 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 10 50 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 5 2 1 0.5 0.001 0.002 0.05 0.1 0.2 0.5 ID=100mA 6 ID=50mA 4 3 2 0.1 0.05 VDS=3V Pulsed 0.01 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 CHANNEL TEMPERATURE : Tch (°C) 150 Ta=−25°C 25°C 75°C 125°C 0.005 0.002 0.0005 0.001 0.002 0.005 0.01 0.02 75 100 125 150 Ta=25°C Pulsed 5 ID=0.1A ID=0.05A 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) 0.02 1 50 10 0 0 0.5 Fig.13 Static drain-source on-state resistance vs. drain current ( ΙΙ ) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.005 0.01 0.02 25 0 15 0.2 5 0 −50 −25 Fig.11 Gate threshold voltage vs. channel temperature 10 VGS=4V Pulsed 7 0.5 DRAIN CURRENT : ID (A) Fig.12 Static drain-source on-state resistance vs. drain current ( Ι ) 8 1 CHANNEL TEMPERATURE : Tch (°C) VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : ID (A) 9 4 VDS=3V ID=0.1mA Pulsed 1.5 Fig.10 Typical transfer characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.9 Typical output characteristics 50 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2 20m 0.05 0.1 0.2 Fig.14 Static drain-source on-state resistance vs. gate-source voltage REVERSE DRAIN CURRENT : IDR (A) 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m Ta=25°C Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) Tr2 0.5 DRAIN CURRENT : ID (A) Fig.16 Forward transfer admittance vs. Fig.15 Static drain-source on-state drain current resistance vs. channel temperature 200m VGS=0V Pulsed 100m 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.17 Reverse drain current vs. source-drain voltage ( Ι ) 4/5 EMF6 50 Ta=25°C Pulsed 100m 20 50m 20m VGS=4V 10m 0V 5m 2m 1m 0.5m 1000 Ta=25°C f=1MHZ VGS=0V Ciss 10 5 Coss Crss 2 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITHING TIME : t (ns) 200m CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) Transistors td(off) 200 100 50 20 tr td(on) 10 5 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.18 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.5 0.1 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.19 Typical capacitance vs. drain-source voltage Fig.20 Switching characteristics 5/5