EMF6 Transistors Power management (dual transistors) EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 !External dimensions (Units : mm) !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 !Equivalent circuits (3) (2) Each lead has same dimensions Abbreviated symbol:F6 (1) Tr1 Tr2 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF6 EMT6 F6 T2R 8000 1/5 EMF6 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO −15 VCEO −12 −6 VEBO −500 IC Collector current −1.0 ICP 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS ±20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg −55~+150 Range of storage temperature Unit V V mA mA mA mA mW °C °C ∗1 ∗1 ∗2 ∗1 PW≤10ms Duty cycle≤50% ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −100 − 260 6.5 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−200mA, IB=−10mA VCE=−2V, IC=−10mA VCE=−2V, IE=10mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz Symbol IGSS V(BR)DSS IDSS VGS(th) Min. − 30 − 0.8 − − 20 − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Unit µA V µA V Ω Ω ms pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500Ω, RGS=10Ω 2/5 EMF6 Transistors 0.2 10 0.4 0.6 0.8 1.0 1.2 1.4 1 10 BASE TO EMITTER VOLTAGE : VBE (V) Ta=125°C 100 Ta=25°C Ta=−40°C 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 10000 IC/IB=20 Pulsed 1000 BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 Grounded emitter propagation characteristics 1000 Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=−40°C 100 1 0 Fig.2 DC current gain vs. collector current Ta=25°C 1000 IC/IB=20 Pulsed Ta=25°C 1000 Ta=−40°C Ta=125°C 100 10 1 10 100 1000 1000 Ta=25°C Pulsed 100 IC/IB=50 IC/IB=20 IC/IB=10 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 1000 TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE C Ta=25° Ta= −40° C °C 1 VCE=2V Pulsed Ta=125°C 100 10 COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Pulsed Ta=12 5 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves Tr1 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C 100 Cib 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/5 EMF6 Transistors 0.15 200m 3V 3.5V 0.1 2.5V 0.05 2V 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 10 50 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 5 2 1 0.5 0.001 0.002 0.05 0.1 0.2 0.5 ID=100mA 6 ID=50mA 4 3 2 0.1 0.05 VDS=3V Pulsed 0.01 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 CHANNEL TEMPERATURE : Tch (°C) 150 Ta=−25°C 25°C 75°C 125°C 0.005 0.002 0.0005 0.001 0.002 0.005 0.01 0.02 75 100 125 150 Ta=25°C Pulsed 5 ID=0.1A ID=0.05A 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) 0.02 1 50 10 0 0 0.5 Fig.13 Static drain-source on-state resistance vs. drain current ( ΙΙ ) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.005 0.01 0.02 25 0 15 0.2 5 0 −50 −25 Fig.11 Gate threshold voltage vs. channel temperature 10 VGS=4V Pulsed 7 0.5 DRAIN CURRENT : ID (A) Fig.12 Static drain-source on-state resistance vs. drain current ( Ι ) 8 1 CHANNEL TEMPERATURE : Tch (°C) VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : ID (A) 9 4 VDS=3V ID=0.1mA Pulsed 1.5 Fig.10 Typical transfer characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.9 Typical output characteristics 50 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2 20m 0.05 0.1 0.2 Fig.14 Static drain-source on-state resistance vs. gate-source voltage REVERSE DRAIN CURRENT : IDR (A) 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m Ta=25°C Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) Tr2 0.5 DRAIN CURRENT : ID (A) Fig.16 Forward transfer admittance vs. Fig.15 Static drain-source on-state drain current resistance vs. channel temperature 200m VGS=0V Pulsed 100m 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.17 Reverse drain current vs. source-drain voltage ( Ι ) 4/5 EMF6 50 Ta=25°C Pulsed 100m 20 50m 20m VGS=4V 10m 0V 5m 2m 1m 0.5m 1000 Ta=25°C f=1MHZ VGS=0V Ciss 10 5 Coss Crss 2 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITHING TIME : t (ns) 200m CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) Transistors td(off) 200 100 50 20 tr td(on) 10 5 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.18 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.5 0.1 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.19 Typical capacitance vs. drain-source voltage Fig.20 Switching characteristics 5/5